| 21/00 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof |
| 21/02 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof |
| 21/027 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L 21/18 or H01L 21/34 |
| 21/033 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L 21/18 or H01L 21/34 comprising inorganic layers |
| 21/04 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer |
| 21/06 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials |
| 21/08 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials Preparation of the foundation plate |
| 21/10 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination |
| 21/103 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination Conversion of the selenium or tellurium to the conductive state |
| 21/105 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination Treatment of the surface of the selenium or tellurium layer after having been made conductive |
| 21/108 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination Provision of discrete insulating layers, i.e. non-genetic barrier layers |
| 21/12 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate |
| 21/14 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials Treatment of the complete device, e.g. by electroforming to form a barrier |
| 21/145 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials Treatment of the complete device, e.g. by electroforming to form a barrier Ageing |
| 21/16 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide |
| 21/18 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials |
| 21/20 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials Deposition of semiconductor materials on a substrate, e.g. epitaxial growth |
| 21/203 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering |
| 21/205 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition |
| 21/208 | Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition |