| 2024/0079,238 | BONDED OBJECT PRODUCTION METHOD AND PRODUCTION METHOD FOR CERAMIC CIRCUIT SUBSTRATE USING SAME | Nov 14, 23 | Mar 07, 24 | KABUSHIKI KAISHA TOSHIBA; Toshiba Materials Co. Ltd.; |
| 2020/0266,277 | FIELD-EFFECT TRANSISTOR WITH A TOTAL CONTROL OF THE ELECTRICAL CONDUCTIVITY ON ITS CHANNEL | Sep 27, 18 | Aug 20, 20 | Not available |
| 2015/0214,054 | Method of Forming Copper Sulfide Film for Reducing Cu Oxidization and Loss | Jan 24, 14 | Jul 30, 15 | MACRONIX INTERNATIONAL CO., LTD. |
| 2012/0261,658 | ZnO-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Apr 12, 12 | Oct 18, 12 | ROHM CO., LTD., TOHOKU UNIVERSITY, |
| 2012/0068,143 | Memory Arrays And Methods Of Forming Memory Cells | Sep 20, 10 | Mar 22, 12 | MICRON TECHNOLOGY, INC. |
| 2012/0043,537 | PROCESS FOR PRODUCING SEMICONDUCTIVE LAYERS | Apr 26, 10 | Feb 23, 12 | BASF SE |
| 2012/0014,161 | Memristive Negative Differential Resistance Device | Jul 16, 10 | Jan 19, 12 | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
| 2011/0266,515 | MEMRISTIVE SWITCH DEVICE | Apr 28, 10 | Nov 03, 11 | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
| 2011/0227,024 | RESISTANCE-SWITCHING MEMORY CELL WITH HEAVILY DOPED METAL OXIDE LAYER | Jul 23, 10 | Sep 22, 11 | SANDISK TECHNOLOGIES LLC |
| 2011/0229,990 | FORMING AND TRAINING PROCESSES FOR RESISTANCE-CHANGE MEMORY CELL | Jul 23, 10 | Sep 22, 11 | SANDISK TECHNOLOGIES LLC |
| 2011/0212,569 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Feb 17, 11 | Sep 01, 11 | Semiconductor Energy Laboratory Co., Ltd. |
| 2011/0186,799 | NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOF | Feb 03, 11 | Aug 04, 11 | SANDISK TECHNOLOGIES LLC |
| 2011/0175,050 | Metal Oxide Resistance Based Semiconductor Memory Device With High Work Function Electrode | Sep 09, 10 | Jul 21, 11 | MACRONIX INTERNATIONAL CO., LTD. |
| 2011/0175,080 | Transistors, methods of manufacturing a transistor, and electronic devices including a transistor | Aug 11, 10 | Jul 21, 11 | SAMSUNG ELECTRONICS CO., LTD. |
| 2011/0147,691 | SEMICONDUCTOR MEMORY DEVICE USING VARIABLE RESISTANCE ELEMENT OR PHASE-CHANGE ELEMENT AS MEMORY DEVICE | Aug 30, 10 | Jun 23, 11 | KABUSHIKI KAISHA TOSHIBA |
| 2011/0151,617 | Memory and methods of forming the same to enhance scalability of non-volatile two-terminal memory cells | Dec 18, 09 | Jun 23, 11 | UNITY SEMICONDUCTOR CORPORATION |
| 2011/0133,148 | RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | May 04, 10 | Jun 09, 11 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 2011/0127,483 | RESISTANCE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF | Jul 27, 10 | Jun 02, 11 | TOSHIBA MEMORY CORPORATION |
| 2011/0117,697 | Semiconductor Device and Manufacturing Method Thereof | Jan 21, 11 | May 19, 11 | Semiconductor Energy Laboratory Co., Ltd. |
| 2011/0108,829 | SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME | Nov 25, 08 | May 12, 11 | NEC CORPORATION |