H01L 21/08

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
9922933 Method of positioning elements, particularly optical elements, on the back side of a hybridized-type infrared detectorAug 27, 15Mar 20, 18SOCIETE FRANCAISE DE DETECTEURS INFRAROUGES-SOFRADIR
9748314 Light-emitting device, information processing device, and imaging deviceFeb 08, 16Aug 29, 17Semiconductor Energy Laboratory Co., Ltd.
9293712 Disubstituted pyrene compounds with amino group containing ortho aryl group and devices containing the sameSep 15, 14Mar 22, 16UNIVERSAL DISPLAY CORPORATION
9086428 Functional device, method of manufacturing the functional device, physical quantity sensor, and electronic apparatusOct 20, 11Jul 21, 15SEIKO EPSON CORPORATION
8546912 Semiconductor deviceApr 05, 12Oct 01, 13Semiconductor Energy Laboratory Co., Ltd.
8159043 Semiconductor deviceMar 09, 05Apr 17, 12Semiconductor Energy Laboratory Co., Ltd.
8022482 Device configuration of asymmetrical DMOSFET with schottky barrier sourceFeb 14, 06Sep 20, 11ALPHA & OMEGA SEMICONDUCTOR, LTD.
7985966 Electro-optically active organic diode with short protectionJul 12, 07Jul 26, 11KONINKLIJKE PHILIPS ELECTRONICS N.V., KONINKLIJKE PHILIPS ELECTRONICS N V,
7615473 Method of introducing ion and method of manufacturing semiconductor deviceJan 16, 03Nov 10, 09Semiconductor Energy Laboratory Co., Ltd.
7193352 Thin film bulk acoustic wave sensor suiteMar 11, 05Mar 20, 07The United States of America as represented by the Secretary of the Army
6022781 Method for fabricating a MOSFET with raised STI isolation self-aligned to the gate stackDec 23, 96Feb 08, 00INTERNATIONAL BUSINESS MACHINES CORPORATION
5792708 Method for forming residue free patterned polysilicon layers upon high step height integrated circuit substratesMar 06, 96Aug 11, 98CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD.
5543648 Semiconductor member and semiconductor device having a substrate with a hydrogenated surfaceDec 19, 95Aug 06, 96CANON KABUSHIKI KAISHA
5334281 Method of forming thin silicon mesas having uniform thicknessApr 30, 92Aug 02, 94INTERNATIONAL BUSINESS MACHINES CORPORATION
5001538 Bipolar sinker structure and process for forming sameDec 28, 88Mar 19, 91MICEL INCORORATED
4920075 Method for manufacturing a semiconductor device having a lens sectionJan 07, 87Apr 24, 90Tokyo Shibaura Denki Kabushiki Kaisha
4885261 Method for isolating a semiconductor elementMar 10, 89Dec 05, 89KABUSHIKI KAISHA TOSHIBA
4735679 Method of improving silicon-on-insulator uniformityMar 30, 87Apr 05, 88INTERNATIONAL BUSINESS MACHINES CORPORATION
4686763 Method of making a planar polysilicon bipolar deviceOct 02, 85Aug 18, 87GLOBALFOUNDRIES INC.
4622574 Semiconductor chip with recessed bond padsJul 29, 85Nov 11, 86HUGHES DANBURY OPTICAL SYSTEMS, INC., HUGHES ELECTRONICS CORPORATION,