H01L 21/02

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Showing 1 to 20 of 11868 results

Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
RE50089 Three dimensional semiconductor devicesApr 29, 22Aug 20, 24Samsung Electronics Co., Ltd.
RE50029 Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures therofApr 14, 21Jul 02, 24Micron Technology Inc.
RE49962 Semiconductor deviceApr 29, 22May 07, 24Kabushiki Kaisha Toshiba; TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION;
RE49954 Fabrication of nano-sheet transistors with different threshold voltagesJun 03, 21Apr 30, 24TESSERA LLC
RE49869 Group-III nitride devices and systems on IBAD-textured substratesMar 26, 21Mar 12, 24iBeam Materials, Inc.
RE49715 Memory arraysAug 31, 21Oct 24, 23Micron Technology Inc.
RE49677 Reusable nitride wafer, method of making, and use thereofSep 04, 20Oct 03, 23SLT TECHNOLOGIES, INC.
RE49657 Epitaxial wafer manufacturing method and epitaxial waferSep 30, 20Sep 12, 23Sumco Corporation
RE49603 GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereofMay 07, 20Aug 08, 23GAN SYSTEMS INC.
RE49563 Negative capacitance fet device with reduced hysteresis windowFeb 15, 22Jun 27, 23Samsung Electronics Co., Ltd.
RE49285 Semiconductor device structure and methods of its productionDec 28, 20Nov 08, 22SweGaN AB
RE49201 Organic light-emitting display device and manufacturing method of the sameAug 08, 18Sep 06, 22Samsung Display Co., Ltd.
RE49167 Passivation structure for semiconductor devicesNov 12, 19Aug 09, 22Wolfspeed, Inc.
RE49106 Organic light-emitting display device and manufacturing method of the sameAug 08, 18Jun 14, 22Samsung Display Co., Ltd.
RE49015 Negative capacitance FinFET device and manufacturing method of the sameJun 05, 19Apr 05, 22Samsung Electronics Co., Ltd.
RE48398 Process and system for uniformly crystallizing amorphous silicon substrate by fiber laserAug 08, 19Jan 19, 21IPG Photonics Corporation
RE48290 Thin film transistor array panelSep 13, 18Oct 27, 20Samsung Display Co., Ltd.
RE47767 Group III-nitride layers with patterned surfacesDec 23, 15Dec 17, 19Nokia of America Corporation
RE47170 Method of forming semiconductor patternsJul 12, 13Dec 18, 18ASM IP Holding B.V.
9997404 Method of forming an interconnect structure for a semiconductor deviceAug 29, 16Jun 12, 18Taiwan Semiconductor Manufacturing Company, Ltd.

Showing 1 to 20 of 11868 results