G11C 7/18

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
RE46949 Non-volatile semiconductor storage deviceDec 07, 15Jul 10, 18TOSHIBA MEMORY CORPORATION
9997436 Apparatus and method of three dimensional conductive linesDec 15, 16Jun 12, 18Taiwan Semiconductor Manufacturing Co Ltd.
9972370 Memory device with shortened pre-charging time for bit-lineFeb 17, 16May 15, 18SK Hynix Inc.
9966131 Using sense amplifier as a write booster in memory operating with a large dual rail voltage supply differentialAug 21, 15May 08, 18Synopsys, Inc.
9953707 Memory deviceSep 06, 16Apr 24, 18TOSHIBA MEMORY CORPORATION
9953702 Semiconductor memory devices, memory systems including the same and methods of operating the sameMay 15, 17Apr 24, 18Samsung Electronics Co., Ltd.
9941012 Twin memory cell interconnection structureMar 08, 17Apr 10, 18STMICROELECTONICS (ROUSSET) SAS
9922709 Memory hole bit line structuresMay 18, 15Mar 20, 18SANDISK TECHNOLOGIES LLC
9922700 Memory read stability enhancement with short segmented bit line architectureMay 24, 16Mar 20, 18TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
9917094 Semiconductor device having staggered pillarsOct 22, 15Mar 13, 18SAMSUNG ELECTRONICS CO., LTD.
9875800 3D NAND semiconductor device for erasing groups of bit linesApr 21, 15Jan 23, 18SK HYNIX INC.
9870823 Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variationsMay 16, 17Jan 16, 18UNITY SEMICONDUCTOR CORPORATION
9851915 Two-stage read/write 3D architecture for memory devicesJun 20, 17Dec 26, 17TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
9824726 Semiconductor device having air-gapMay 25, 16Nov 21, 17SAMSUNG ELECTRONICS CO., LTD.
9824766 Semiconductor device including nonvolatile memory configured to switch between a reference current reading system and a complementary reading systemSep 02, 15Nov 21, 17RENESAS ELECTRONICS CORPORATION
9825146 Dummy bit line MOS capacitor and device using the sameDec 07, 15Nov 21, 17SK HYNIX INC.
9812177 Circuit, method of using the circuit and memory macro including the circuitAug 11, 15Nov 07, 17TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
9812179 Techniques for reducing disturbance in a semiconductor memory deviceJun 24, 14Nov 07, 17OVONYX MEMORY TECHNOLOGY, LLC
9805768 Three-dimensional (3D) non-volatile semiconductor memory device for loading improvementJun 26, 15Oct 31, 17SK HYNIX INC.
9786333 Dual-bit 3-T high density MTPROM arrayApr 04, 17Oct 10, 17GLOBALFOUNDRIES INC.

Showing 1 to 20 of 258 results