G11C 5/08

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
9928891 Nonvolatile variable resistance memory circuit which includes magnetic tunnel junction elementSep 18, 14Mar 27, 18Tohoku University
9870823 Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variationsMay 16, 17Jan 16, 18UNITY SEMICONDUCTOR CORPORATION
9805780 Nonvolatile memory with magnetoresistive element and transistorSep 16, 16Oct 31, 17KABUSHIKI KAISHA TOSHIBA
9767874 Memory apparatus and memory deviceJul 27, 16Sep 19, 17SONY CORPORATION
9711215 Apparatus and method to optimize STT-MRAM size and write error rateSep 27, 13Jul 18, 17INTEL CORPORATION
9691480 Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variationsJul 08, 16Jun 27, 17UNITY SEMICONDUCTOR CORPORATION
9640257 Method and circuit for programming non-volatile memory cells of a volatile/non-volatile memory arrayJan 07, 15May 02, 17CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,
9633708 Semiconductor storage device using STT-MRAMDec 03, 14Apr 25, 17TOHOKU UNIVERSITY
9613674 Mismatch and noise insensitive sense amplifier circuit for STT MRAMMay 24, 16Apr 04, 17INTERNATIONAL BUSINESS MACHINES CORPORATION
9588911 Semiconductor system for implementing an ising model of interactionMar 09, 15Mar 07, 17HITACHI, LTD.
9583537 Resistance-change semiconductor memoryDec 15, 15Feb 28, 17TOSHIBA MEMORY CORPORATION
9525127 Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance elementDec 10, 14Dec 20, 16III HOLDINGS 3, LLC
9424903 Memory apparatus and memory deviceMar 06, 13Aug 23, 16SONY CORPORATION
9390796 Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variationsJul 02, 15Jul 12, 16UNITY SEMICONDUCTOR CORPORATION
9378795 Mismatch and noise insensitive sense amplifier circuit for STT MRAMJun 24, 15Jun 28, 16INTERNATIONAL BUSINESS MACHINES CORPORATION
9368208 Non-volatile latch using magneto-electric and ferro-electric tunnel junctionsApr 20, 15Jun 14, 16INTEL CORPORATION, THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK, BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, The Research Foundation For The State University of New York University At Buffalo,
9343115 Nonvolatile semiconductor memory deviceMar 12, 15May 17, 16PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
9343131 Mismatch and noise insensitive sense amplifier circuit for STT MRAMFeb 24, 15May 17, 16INTERNATIONAL BUSINESS MACHINES CORPORATION
9330743 Memory cores of resistive type memory devices, resistive type memory devices and method of sensing data in the sameApr 03, 15May 03, 16SAMSUNG ELECTRONICS CO., LTD.
9324382 Resistive memory device capable of improving sensing margin of dataOct 09, 14Apr 26, 16SAMSUNG ELECTRONICS CO., LTD.

Showing 1 to 20 of 90 results