C30B 9/00

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
RE47114 Polycrystalline group III metal nitride with getter and method of makingMar 24, 17Nov 06, 18SLT TECHNOLOGIES, INC.
9995875 Method and apparatus for producing crystalline cladding and crystalline core optical fibersJul 27, 16Jun 12, 18The Penn State Research Foundation; General Opto Solutions, LLC;
9960316 Method for separating group 13 element nitride layer, and composite substrateMay 31, 17May 01, 18NGK Insulators, Ltd.
9890471 Method for producing gallium nitride crystal by reacting metal gallium and iron nitrideSep 03, 14Feb 13, 18DEXERIALS CORPORATION
9869033 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateFeb 11, 15Jan 16, 18RICOH COMPANY, LTD.
9856575 Crystal growth apparatus and manufacturing method of group III nitride crystalSep 14, 15Jan 02, 18RICOH COMPANY, LTD.
9768352 Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using sameNov 23, 16Sep 19, 17NGK INSULATORS, LTD.
9732435 Group 13 nitride crystal and group 13 nitride crystal substrateSep 10, 12Aug 15, 17RICOH COMPANY, LTD.
9732436 SiC single-crystal ingot, SiC single crystal, and production method for sameApr 16, 13Aug 15, 17TOYOTA JIDOSHA KABUSHIKI KAISHA
9732441 Production apparatus and production method of SiC single crystalJun 15, 12Aug 15, 17NIPPON STEEL & SUMITOMO METAL CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA,
9677193 Sheet production apparatus for removing a crystalline sheet from the surface of a melt using gas jets located above and below the crystalline sheetApr 01, 14Jun 13, 17VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
9650723 Large area seed crystal for ammonothermal crystal growth and method of makingApr 10, 14May 16, 17SLT TECHNOLOGIES, INC.
9567690 Process for the production of crystalline titanium powderMay 29, 13Feb 14, 17CSIR
9548418 Gallium nitride self-supported substrate, light-emitting device and manufacturing method thereforFeb 05, 16Jan 17, 17NGK INSULATORS, LTD.
9543473 Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using sameMar 17, 16Jan 10, 17NGK INSULATORS, LTD.
9534317 Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystalOct 29, 13Jan 03, 17DENSO CORPORATION, SHOWA DENKO K.K., KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,
9464367 Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrateSep 02, 14Oct 11, 16RICOH COMPANY, LTD.
9435051 Bismuth-doped semi-insulating group III nitride wafer and its production methodDec 28, 15Sep 06, 16SEOUL SEMICONDUCTOR CO., LTD.
9388506 Semiconductor crystal removal apparatus and production method for semiconductor crystalJun 14, 13Jul 12, 16TOYODA GOSEI CO., LTD.
9376763 Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogenNov 16, 12Jun 28, 16RICOH COMPANY, LTD.

Showing 1 to 20 of 99 results