C30B 7/10

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
RE47114 Polycrystalline group III metal nitride with getter and method of makingMar 24, 17Nov 06, 18SLT TECHNOLOGIES, INC.
9981240 Devices for charge-titrating particle assembly, and methods of using the devicesAug 19, 16May 29, 18HRL Laboratories, LLC
9985102 Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growthFeb 27, 14May 29, 18Sixpoint Materials, Inc.
9976232 Artificial quartz crystal growth methodFeb 18, 16May 22, 18Murata Manufacturing Co., Ltd.
9976229 Method for producing nitride single crystalSep 29, 14May 22, 18MITSUBISHI CHEMICAL CORPORATION; NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY; The Japan Steel Works, Ltd.;
9972489 Composition and method for making picocrystalline artificial borane atomsNov 29, 16May 15, 18SemiNuclear, Inc.
9970126 Production of free-standing crystalline material layersFeb 20, 14May 15, 18Massachusetts Institute of Technology
9935313 Positive electrode for lithium secondary battery, manufacturing method thereof, and lithium secondary batteryJan 19, 17Apr 03, 18SEMICONDUCTOR ENERGY LABORATORY CO., LTD
9926642 Method of manufacturing a pressure vessel for growing single crystalsMar 13, 15Mar 27, 18Furuya Metal Co. Ltd.; Kimmon Manufacturing Co. Ltd. and Mitsubishi Chemical Corporation; THE JAPAN STEEL WORKS, LTD.;
9909230 Seed selection and growth methods for reduced-crack group III nitride bulk crystalsJan 22, 16Mar 06, 18SIXPOINT MATERIALS, INC.
9909229 Rubidium uranium fluoride-based crystals and methods of fabricationMar 22, 16Mar 06, 18The United States of America as represented by the Secretary of the Air Force
9903041 Uranium dioxide-based crystals and methods of fabricationMar 22, 16Feb 27, 18The United States of America as represented by the Secretary of the Air Force
9890474 Crystal of nitride of group-13 metal on periodic table, and method for producing the sameAug 21, 15Feb 13, 18MITSUBISHI CHEMICAL CORPORATION
9885121 High pressure reactor and method of growing group III nitride crystals in supercritical ammoniaJun 27, 16Feb 06, 18SIXPOINT MATERIALS, INC.
9869033 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateFeb 11, 15Jan 16, 18RICOH COMPANY, LTD.
9856581 Synthesis, capping and dispersion of nanocrystalsMar 21, 16Jan 02, 18Pixelligent Technologies LLC
9834863 Group III nitride bulk crystals and fabrication methodJan 16, 15Dec 05, 17SEOUL SEMICONDUCTOR CO., LTD.
9822465 Method of fabricating group III nitride with gradually degraded crystal structureDec 02, 15Nov 21, 17SEOUL SEMICONDUCTOR CO., LTD.
9803293 Method for producing group III-nitride wafers and group III-nitride wafersFeb 25, 09Oct 31, 17SIXPOINT MATERIALS, INC.
9790616 Method of fabricating bulk group III nitride crystals in supercritical ammoniaDec 02, 15Oct 17, 17SEOUL SEMICONDUCTOR CO., LTD.

Showing 1 to 20 of 124 results