C30B 1/12

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Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
9869032 Manufacturing method of phthalocyanine crystal by milling crystal transformation for at least 1,000 hoursNov 28, 16Jan 16, 18CANON KABUSHIKI KAISHA
9777392 Method of fabricating single crystal colloidal monolayer on substrate and display device comprising the substrateJul 15, 14Oct 03, 17INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
9637840 Process for improving crystallinityJul 20, 09May 02, 17CIRCASSIA LIMITED, CIRCASSIA PHARMACEUTICALS PLC,
9570202 Methods of fine forming sapphire tubes and joining sapphire components for nuclear reactor fuel elements and assembliesMar 14, 13Feb 14, 17Not available
9543457 Method and system for manufacturing back contacts of photovoltaic devicesSep 30, 13Jan 10, 17FIRST SOLAR, INC.
8975093 Complete recrystallization of semiconductor wafersJul 22, 10Mar 10, 15S'TILE
8956952 Multilayer substrate structure and method of manufacturing the sameMar 11, 13Feb 17, 15TIVRA CORPORATION
8859446 α alumina sintered body for production of sapphire single crystalDec 30, 11Oct 14, 14SUMITOMO CHEMICAL COMPANY, LIMITED
8097081 High pressure apparatus and method for nitride crystal growthJun 05, 08Jan 17, 12SLT TECHNOLOGIES, INC.
6187087 Method of bonding a particle material to near theoretical densityOct 05, 99Feb 13, 01MATERIALS MODIFICATION, INC.
4866007 Method for preparing single-crystal ZnSeMar 18, 88Sep 12, 89SUMITOMO ELECTRIC INDUSTRIES, LTD., Production Engineering Association, PRODUCTION ENGINEERING ASSOCIATION, 4-63, MIYAHARA 4-CHOME, YODOGAWA-KU, OSAKA-SHI, OSAKA, JAPAN,
4584053 Process for preparing ZnSe single crystalJun 22, 84Apr 22, 86SUMITOMO ELECTRIC INDUSTRIES, LTD.