C30B 1/06

Technology



back to "C30B 1/06" profile

More Results

Showing 1 to 20 of 28 results

Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
9401277 Substrate processing with reduced warpage and/or controlled strainJun 07, 13Jul 26, 16ULTRATECH, INC.
8828138 FET nanopore sensorMay 17, 10Sep 09, 14GLOBALFOUNDRIES INC.
8663387 Method and system for facilitating bi-directional growthMar 09, 06Mar 04, 14THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
7922812 Method for growing single crystals of metalsNov 08, 07Apr 12, 11INTELLECTUAL VENTURES HOLDING 40 LLC
7666767 Mask for sequential lateral solidification (SLS) process and a method thereofJul 31, 06Feb 23, 10AU OPTRONICS CORPORATION
7217319 Crystallization apparatus and crystallization methodDec 01, 03May 15, 07ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO., LTD.
7214266 Methods of crystal optimizationOct 02, 03May 08, 07IMPERIAL INNOVATIONS LIMITED
7018468 Process for long crystal lateral growth in silicon films by UV and IR pulse sequencingNov 13, 03Mar 28, 06SHARP KABUSHIKI KAISHA
6997985 Semiconductor, semiconductor device, and method for fabricating the sameDec 18, 96Feb 14, 06Semiconductor Energy Laboratory Co., Ltd.
6821338 Particle beam biaxial orientation of a substrate for epitaxial crystal growthDec 15, 00Nov 23, 04THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
6818059 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereofJul 09, 99Nov 16, 04LG DISPLAY CO., LTD.
6733584 Method of forming crystalline silicon filmDec 22, 97May 11, 04Semiconductor Energy Laboratory Co., Ltd.
6458199 Crystallization apparatus and method using non-vacuum processMay 26, 00Oct 01, 02LG DISPLAY CO., LTD.
6241817 Method for crystallizing amorphous layerMay 22, 98Jun 05, 01LG DISPLAY CO., LTD.
6176922 Method for improving crystalline thin films with a contoured beam pulsed laserOct 06, 99Jan 23, 01The United States of America as represented by the Secretary of the Navy
6080236 Electronic device manufactureNov 20, 97Jun 27, 00TPO HONG KONG HOLDING LIMITED
5916363 Oriented molybdenum or tungsten single crystal and manufacturing method thereofJul 08, 97Jun 29, 99National Research Institute for Metals
5772754 Ultrafine particles and production method thereofFeb 07, 96Jun 30, 98RESEARCH DEVELOPMENT CORPORATION OF JAPAN, KABUSHIKI KAISHA TOSHIBA,
5693138 Magnetooptical elementAug 17, 95Dec 02, 97NEC TOKIN CORPORATION
5588992 Conversion of doped polycrystalline material to single crystal materialNov 03, 95Dec 31, 96GENERAL ELECTRIC COMPANY

Showing 1 to 20 of 28 results