H01L 21/205

Technology



back to "H01L 21/205" profile

More Results

Showing 1 to 20 of 461 results

Patent/Pub #TitleFiling DateIssue/Publication DatePatent Owner
9966438 Method of doped germanium formationJan 27, 17May 08, 18APPLIED MATERIALS, INC.
9957610 High-frequency wave supplying structureJul 12, 17May 01, 18c/o TOYOTA JIDOSHA KABUSHIKI KAISHA
9947530 Method of manufacturing nitride semiconductor substrateJan 06, 17Apr 17, 18Samsung Electronics Co., Ltd.
9923060 Gallium nitride apparatus with a trap rich regionMay 26, 16Mar 20, 18ANALOG DEVICES, INC.
9865513 Semiconductor device manufacturing methodMay 21, 14Jan 09, 18MITSUBISHI ELECTRIC CORPORATION
9864138 Integrated photonics including germaniumJan 04, 16Jan 09, 18THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK
9837357 Method to reduce variability in contact resistanceFeb 06, 17Dec 05, 17INTERNATIONAL BUSINESS MACHINES CORPORATION
9824885 Method of fabricating double sided Si(Ge)/Sapphire/III-nitride hybrid structureSep 13, 16Nov 21, 17UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
9768074 Transistor structure and fabrication methods with an epitaxial layer over multiple halo implantsMar 28, 16Sep 19, 17Not available
9761446 Methods for the synthesis of arrays of thin crystal grains of layered semiconductors SnS2 and SnS at designed locationsMay 06, 14Sep 12, 17UNIVERSITY OF HOUSTON SYSTEM
9761709 III-nitride transistor with enhanced doping in base layerAug 28, 14Sep 12, 17HRL LABORATORIES, LLC
9691758 Fin-type resistorMar 11, 16Jun 27, 17TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
9633853 Method for forming an electrical contactDec 03, 15Apr 25, 17IMEC
9625168 Exhaust systemJul 25, 11Apr 18, 17EBARA CORPORATION
9611987 White light source employing a III-nitride based laser diode pumping a phosphorOct 29, 13Apr 04, 17THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
9601654 Method of producing group III nitride semiconductor light-emitting deviceOct 24, 15Mar 21, 17TOYODA GOSEI CO., LTD.
9589848 FinFET structures having silicon germanium and silicon channelsApr 03, 15Mar 07, 17GLOBALFOUNDRIES INC.
9556535 Template for epitaxial growth, method for producing the same, and nitride semiconductor deviceAug 29, 14Jan 31, 17SOKO KAGAKU CO., LTD.
9552982 Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactantsApr 19, 16Jan 24, 17NOVELLUS SYSTEMS, INC.
9543146 Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical materialSep 01, 15Jan 10, 17KABUSHIKI KAISHA TOSHIBA

Showing 1 to 20 of 461 results