H01L 21/208

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Class  H01L : SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR


Subclass 21/208: Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
11473212 Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densitiesMay 29, 18Oct 18, 22NGK INSULATORS, LTD.
10916423 Paste composition and method for forming silicon germanium layerSep 16, 16Feb 09, 21Toyo Aluminium Kabushiki Kaisha
10243104 Nanowire device having graphene top and bottom electrodes and method of making such a deviceJan 10, 13Mar 26, 19NORWEGIAN UNIVERESITY OF SCIENCE AND TECHNOLOGY (NTNU)
10030318 Composite substrate, method for fabricating same, function element, and seed crystal substrateDec 15, 15Jul 24, 18NGK Insulators, Ltd.
9640390 Method for modifying and controlling the threshold voltage of thin film transistorsMay 07, 13May 02, 17THIN FILM ELECTRONICS ASA
9490271 Array substrate having jump wire connecting first and second wiringsAug 20, 14Nov 08, 16SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
9306087 Method for manufacturing a photovoltaic cell with a locally diffused rear sideSep 04, 12Apr 05, 16E. I. DU PONT DE NEMOURS AND COMPANY, INNOVALIGHT, INC.,
9029245 Printed material constrained by well structures and devices including sameDec 02, 13May 12, 15PALO ALTO RESEARCH CENTER INCORPORATED
8951609 CNT devices, low-temperature fabrication of CNT and CNT photo-resistsApr 25, 11Feb 10, 15STMicroelectronics Asia Pacific Pte. Ltd.
8895425 Method of forming channel layer of electric device and method of manufacturing electric device using the sameSep 14, 12Nov 25, 14SNU R&DB FOUNDATION
7964477 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor deviceMay 22, 09Jun 21, 11SUMITOMO ELECTRIC INDUSTRIES, LTD.
7816250 Composite solder TIM for electronic packageSep 29, 06Oct 19, 10INTEL CORPORATION
7811909 Production of a hexagonal boron nitride crystal body capable of emitting out ultraviolet radiationMay 22, 08Oct 12, 10NATIONAL INSTITUTE FOR MATERIALS SCIENCE
7776724 Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric materialDec 04, 07Aug 17, 10INNOVALIGHT, INC.
7666764 Compound semiconductor material and method for forming an active layer of a thin film transistor deviceJul 20, 06Feb 23, 10INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
7309645 Semiconductor thin film crystallization methodMar 30, 05Dec 18, 07SHARP KABUSHIKI KAISHA
7186581 Organic electroluminescent device, manufacturing method therefor, and electronic devices therewithJul 08, 05Mar 06, 07SEIKO EPSON CORPORATION
7115507 Patterning methodJul 22, 03Oct 03, 06SEIKO EPSON CORPORATION
6740259 Method of manufacture of ceramic materialsNov 08, 01May 25, 04CHEMTRON RESEARCH LLC
6319317 Coating film forming method and coating apparatusApr 18, 00Nov 20, 01TOKYO ELECTRON LIMITED

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