H01L 21/18

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Class  H01L : SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR


Subclass 21/18: Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
12236318 Systems, devices, articles, and methods to interact with information stored in bound-exciton states associated with luminescent silicon defectsAug 06, 20Feb 25, 25Photonic Inc.
12237165 Method for wafer bonding including edge trimmingJul 30, 21Feb 25, 25Taiwan Semiconductor Manufacturing Company Ltd.
12227679 Surface activated bonding method by ion or atom bombardment of a first surface of a first substrate to a second surface of a second substrateFeb 28, 23Feb 18, 25Commissariat à l'Energie Atomique et aux Energies Alternatives
12217963 Bonding apparatus, bonding system, and bonding methodApr 27, 20Feb 04, 25Tokyo Electron Limited
12211727 Simultaneous bonding approach for high quality wafer stackingMar 29, 23Jan 28, 25Taiwan Semiconductor Manufacturing Company Ltd.
12199082 Method of direct-bonded optoelectronic devicesOct 31, 23Jan 14, 25ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
12148666 Semiconductor device, method of manufacturing semiconductor device, and method of recycling substrateApr 06, 23Nov 19, 24Kioxia Corporation
12119318 Bonding structure and method of forming sameApr 19, 23Oct 15, 24TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
12112976 Pseudo-substrate with improved efficiency of usage of single crystal materialNov 03, 20Oct 08, 24Soitec
12103246 Method of bonding substrates, microchip and method of manufacturing the sameNov 15, 17Oct 01, 24Ushio Denki Kabushiki Kaisha
12087631 Method for producing a composite structure comprising a thin monocristalline layer on a carrier substrateDec 15, 20Sep 10, 24Soitec
12080554 Bonding method, bonding device, and holding memberApr 08, 21Sep 03, 24Nikon Corporation
12068321 Semiconductor devicesJul 05, 23Aug 20, 24Samsung Electronics Co. Ltd.
12027591 Method for forming a semiconductor device and a semiconductor deviceJul 29, 21Jul 02, 24Infineon Technologies AG
11948912 Method of manufacturing a bonded substrate stack by surface activationFeb 01, 23Apr 02, 24Infineon Technologies AG
11916040 Bonding cavity structure and bonding methodDec 04, 19Feb 27, 24Shanghai IC R&D Center Co., Ltd.; Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd;
11901342 Discontinuous patterned bonds for semiconductor devices and associated systems and methodsJan 07, 22Feb 13, 24Micron Technology Inc.
11894449 Methods for forming lateral heterojunctions in two-dimensional materials integrated with multiferroic layersSep 28, 22Feb 06, 24The Government of the United States of America as represented by the Secretary of the Navy
11871576 Semiconductor memory device including integrated control circuit and solid-state drive controllerDec 07, 20Jan 09, 24Kioxia Corporation
11862487 Device and method for bonding of two substratesDec 19, 22Jan 02, 24EV GROUP E. THALLNER GMBH

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2025/0112,083 MULTI-MATERIAL CHUCKOct 03, 23Apr 03, 25Tokyo Electron Limited
2025/0022,747 PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTAL MATERIALSep 30, 24Jan 16, 25Not available
2025/0014,889 PROCESSING METHOD OF WAFERJun 25, 24Jan 09, 25Not available
2025/0014,949 PROCESSING METHOD OF WAFERJul 02, 24Jan 09, 25Not available
2024/0404,859 SUBSTRATE CORRECTION DEVICE, SUBSTRATE LAMINATION DEVICE, SUBSTRATE PROCESSING SYSTEM, SUBSTRATE CORRECTION METHOD, SUBSTRATE PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHODAug 09, 24Dec 05, 24Nikon Corporation
2024/0395,752 BONDING STRUCTURE AND METHOD OF FORMING SAMEJul 31, 24Nov 28, 24Not available
2024/0395,873 III-N SILICON SEMICONDUCTOR WAFERAug 05, 24Nov 28, 24AZUR SPACE SOLAR POWER GMBH
2024/0387,176 STACKED SUBSTRATE FOR LASER LIFT-OFF, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUSAug 19, 22Nov 21, 24Not available
2024/0387,177 BONDING METHOD, BONDING DEVICE, AND HOLDING MEMBERJul 26, 24Nov 21, 24Nikon Corporation
2024/0379,505 Bond Films for Reduced Thermal Resistance and Methods Forming the SameMay 09, 23Nov 14, 24Not available
2024/0371,641 METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR BONDED SUBSTRATE AND COMPOUND SEMICONDUCTOR BONDED SUBSTRATEMar 17, 22Nov 07, 24Shin-Etsu Handotai Co Ltd.
2024/0371,850 TECHNIQUES FOR PROCESSING DEVICESDec 15, 23Nov 07, 24Not available
2024/0347,339 COMPOSITE SUBSTRATE FOR FABRICATION OF BETA GALLIUM OXIDE DEVICESApr 17, 23Oct 17, 24Not available
2024/0322,002 HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS OF MAKING AND USE THEREOFJan 22, 24Sep 26, 24Not available
2024/0304,494 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR SEPARATING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUSMar 06, 24Sep 12, 24Kioxia Corporation
2024/0274,573 METHOD OF MANUFACTURING A BONDED SUBSTRATE STACK BY SURFACE ACTIVATIONApr 01, 24Aug 15, 24Not available
2024/0266,172 SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE BONDING INTERFACE, AND ASSOCIATED MANUFACTURING METHODJun 08, 21Aug 08, 24Not available
2024/0250,166 TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAMEDec 08, 23Jul 25, 24Not available
2024/0222,440 TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERSDec 28, 22Jul 04, 24Not available
2024/0203,804 ENGINEERED SEMICONDUCTOR SUBSTRATENov 20, 23Jun 20, 24Not available

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