Class G11C : STATIC STORES
Subclass 7/08: Arrangements for writing information into, or reading information out from, a digital store (G11C 5/00 takes precedence; auxiliary circuits for stores using semiconductor devices G11C 11/4063, G11C 11/413, G11C 11/4193) Sense amplifiers; Associated circuits (amplifiers per seH03F, H03K) Control thereof
| Patent # | Title | Filing Date | Issue Date | Patent Owner |
|---|---|---|---|---|
| 12230339 | Electronic device and driving method thereof | Jul 12, 22 | Feb 18, 25 | CHANGXIN MEMORY TECHNOLOGIES, INC. |
| 12224034 | Memory device and data approximation search method thereof | May 03, 23 | Feb 11, 25 | Macronix International Co. Ltd. |
| 12224035 | Device for receiving single-ended signal of light emitting diode control card and forwarding as differential signals | Oct 10, 24 | Feb 11, 25 | Valley Microelectronics, Inc. |
| 12224037 | Apparatuses and methods of memory access control with section predecoding and section selection | Jun 14, 22 | Feb 11, 25 | Micron Technology Inc. |
| 12217795 | Memory and operating method thereof | Mar 04, 24 | Feb 04, 25 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.; National Tsing Hua University; |
| 12211579 | Memory sense amplifier trimming | Jan 26, 24 | Jan 28, 25 | Taiwain Semiconductor Manufacturing Company, Ltd. |
| 12205664 | Memory circuit and method of operating same | Jan 20, 23 | Jan 21, 25 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 12189988 | Write broadcast operations associated with a memory device | Dec 20, 19 | Jan 07, 25 | Micron Technology Inc. |
| 12190985 | Sense amplifier circuit, memory device, and operation method thereof | May 11, 22 | Jan 07, 25 | CHANGXIN MEMORY TECHNOLOGIES, INC. |
| 12190990 | Deferred fractional memory row activation | Sep 26, 23 | Jan 07, 25 | RAMBUS INC. |
| 12183410 | Data storage apparatus comprising cell section operable as dosimeter and method of operating | Oct 13, 21 | Dec 31, 24 | ams International AG |
| 12183416 | Apparatuses including temperature-based threshold voltage compensated sense amplifiers and methods for compensating same | May 10, 22 | Dec 31, 24 | Not available |
| 12183429 | Turbo mode SRAM for high performance | Jun 24, 22 | Dec 31, 24 | Taiwan Semiconductor Manufacturing Company Limited |
| 12165696 | Signal routing between memory die and logic die | Jun 02, 22 | Dec 10, 24 | Micron Technology Inc. |
| 12165733 | Sense amplifier, memory device and operation method thereof | Apr 14, 22 | Dec 10, 24 | Taiwan Semiconductor Manufacturing Company Ltd. |
| 12159682 | Multi-level cells, and related arrays, devices, systems, and methods | Jun 02, 22 | Dec 03, 24 | Micron Technology Inc. |
| 12159684 | Memory device with memory pillar inside conductor | Jun 20, 22 | Dec 03, 24 | Kioxia Corporation |
| 12136448 | Memory accessing with auto-precharge | Jun 22, 22 | Nov 05, 24 | Micron Technology Inc. |
| 12119051 | Memory array reset read operation | Aug 10, 22 | Oct 15, 24 | Not available |
| 12112792 | Memory device for wafer-on-wafer formed memory and logic | Apr 04, 22 | Oct 08, 24 | Micron Technology Inc. |
| Publication # | Title | Filing Date | Pub Date | Patent Owner |
|---|---|---|---|---|
| 2025/0118,342 | SENSE AMPLIFIERS AND OPERATION METHODS THEREOF, AND MEMORY DEVICES INCLUDING THE SAME | Apr 12, 24 | Apr 10, 25 | Not available |
| 2025/0118,362 | BANKED SENSE AMPLIFIER CIRCUIT FOR A MEMORY CORE AND A MEMORY CORE COMPLEX | Feb 19, 24 | Apr 10, 25 | Not available |
| 2025/0111,887 | APPARATUSES AND METHODS FOR GRANULAR SINGLE-PASS METADATA ACCESS OPERATIONS | Jun 19, 24 | Apr 03, 25 | Micron Technology Inc. |
| 2025/0104,761 | SIGNAL ROUTING BETWEEN MEMORY DIE AND LOGIC DIE | Dec 06, 24 | Mar 27, 25 | Not available |
| 2025/0085,895 | APPARATUS AND METHODS FOR BACK-TO-BACK STATE MACHINE CONTROLLER BUS OPERATIONS | Sep 13, 23 | Mar 13, 25 | Western Digital Technologies, Inc. |
| 2025/0087,258 | Turbo Mode SRAM for High Performance | Nov 26, 24 | Mar 13, 25 | Not available |
| 2025/0080,366 | Memory Device and Memory System Having the Same | Mar 07, 24 | Mar 06, 25 | Samsung Electronics Co., Ltd. |
| 2025/0069,627 | SENSE AMPLIFIER, MEMORY DEVICE AND OPERATION METHOD THEREOF | Nov 05, 24 | Feb 27, 25 | Taiwan Semiconductor Manufacturing Company Ltd. |
| 2025/0069,629 | PROCESSING IN MEMORY REGISTERS | Jul 27, 24 | Feb 27, 25 | Not available |
| 2025/0061,926 | ADAPTIVE WRITE SCHEME FOR MEMORY DEVICES | Aug 18, 23 | Feb 20, 25 | Not available |
| 2025/0054,524 | MEMORY DEVICE WITH MEMORY PILLAR INSIDE CONDUCTOR | Oct 21, 24 | Feb 13, 25 | Kioxia Corporation |
| 2025/0054,562 | INTEGRATED CIRCUIT AND METHOD OF OPERATING SAME | Nov 20, 23 | Feb 13, 25 | Not available |
| 2025/0046,349 | MEMORY DEVICE FOR OUTPUTTING DATA AND METHOD OF OPERATING THE SAME | Dec 20, 23 | Feb 06, 25 | SK HYNIX INC. |
| 2025/0022,493 | REDUCED LOGIC GATE ACCUMULATORS | May 14, 24 | Jan 16, 25 | Not available |
| 2025/0022,494 | High-Speed and Area-Efficient Parallel-Write-and-Read Memory | Jul 10, 23 | Jan 16, 25 | Not available |
| 2025/0014,622 | FERROELECTRIC MEMORY LOCAL SENSE AMPLIFICATION | Jul 07, 23 | Jan 09, 25 | Wuxi Smart MemoriesTechnologies Co., Ltd. |
| 2025/0006,231 | TRANCEIVER FOR DATA OR SIGNAL TRANSMISSION AND A MEMORY SYSTEM INCLUDING THE TRANCEIVER | Nov 02, 23 | Jan 02, 25 | Not available |
| 2025/0006,251 | SIGNAL ROUTING BETWEEN MEMORY DIE AND LOGIC DIE FOR MODE BASED OPERATIONS | Sep 10, 24 | Jan 02, 25 | Not available |
| 2024/0420,745 | SENSE AMPLIFIER APPLIED TO NON-VOLATILE MEMORY | Apr 09, 24 | Dec 19, 24 | Not available |
| 2024/0420,757 | MEMORY DEVICE FOR WAFER-ON-WAFER FORMED MEMORY AND LOGIC | Aug 30, 24 | Dec 19, 24 | Not available |
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