Class C30B : SINGLE-CRYSTAL GROWTH
Subclass 9/02: Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) by evaporation of the molten solvent
| Patent # | Title | Filing Date | Issue Date | Patent Owner |
|---|---|---|---|---|
| 10927476 | Production method for group III nitride crystal | Jan 09, 19 | Feb 23, 21 | Osaka University; PANASONIC CORPORATION; |
| 10156025 | Monolithic heterogeneous single crystals with multiple regimes for solid state laser applications | May 04, 16 | Dec 18, 18 | University of South Carolina |
| 10011921 | Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device | Oct 28, 15 | Jul 03, 18 | Osaka University; ITOCHU PLASTICS INC.; National University Corporation Tokyo University of Agriculture and Technology; |
| 9771637 | Composite crucibles and methods of making and using the same | Dec 09, 14 | Sep 26, 17 | ATI PROPERTIES LLC |
| 9388506 | Semiconductor crystal removal apparatus and production method for semiconductor crystal | Jun 14, 13 | Jul 12, 16 | TOYODA GOSEI CO., LTD. |
| 8876971 | Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films | Nov 09, 06 | Nov 04, 14 | ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
| 7744697 | Bulk monocrystalline gallium nitride | Oct 14, 03 | Jun 29, 10 | AMMONO SP. Z O.O., NICHIA CORPORATION, |
| 7220311 | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride | Nov 07, 03 | May 22, 07 | RICOH COMPANY, LTD. |
| 6673647 | Method for growing a solid type II-VI semiconductor material | Jun 25, 02 | Jan 06, 04 | COMMISSARIAT A L'ENERGIE ATOMIQUE |
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