C30B 7/10

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Description

Class  C30B : SINGLE-CRYSTAL GROWTH


Subclass 7/10: Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) by application of pressure, e.g. hydrothermal processes

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
12252812 Ultrapure mineralizer and improved methods for nitride crystal growthFeb 06, 24Mar 18, 25SLT TECHNOLOGIES, INC.
12224172 Group III nitride substrate with oxygen gradient, method of making, and method of useNov 30, 22Feb 11, 25SLT TECHNOLOGIES, INC.
12163252 Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical stateFeb 11, 22Dec 10, 24NGK Insulators Ltd.
12107129 Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceApr 18, 23Oct 01, 24Mitsubishi Chemical Corporation
12060653 Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing bulk GaN crystalDec 23, 21Aug 13, 24Kimmon Manufacturing Co. Ltd. and Mitsubishi Chemical Corporation
12048904 Zeolite membrane compositeJul 30, 18Jul 30, 24MITSUBISHI CHEMICAL CORPORATION
12024795 Ultrapure mineralizer and improved methods for nitride crystal growthOct 29, 21Jul 02, 24SLT TECHNOLOGIES, INC.
12018401 Gallium oxide single crystal particle and method for producing the sameDec 19, 22Jun 25, 24NGK Insulators Ltd.
11977231 Optical lens assembliesDec 09, 21May 07, 24Meta Platforms Technologies, LLC
11958882 Methods directed to crystalline biomoleculesMar 14, 18Apr 16, 24Amgen Inc.
11926901 Fabrication and structure of a nonenzymatic glucose sensorJan 10, 20Mar 12, 24National Yunlin University of Science and Technology
11898267 Nonlinear optical crystal fluorine boron beryllium salt and its preparation process and useNov 11, 20Feb 13, 24FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES
11898269 Oxygen-doped group III metal nitride and method of manufactureMay 06, 20Feb 13, 24SLT TECHNOLOGIES, INC.
11827515 Substrate-free 2D tellureneSep 09, 22Nov 28, 23Purdue Research Foundation
11821108 Method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing processJun 20, 22Nov 21, 23Instytut Wysokich Cisnien Polskiej Akademii Nauk
11810782 Conductive C-plane GaN substrateDec 09, 20Nov 07, 23Kimmon Manufacturing Co. Ltd. and Mitsubishi Chemical Corporation
11799084 by hydrothermal methodMar 11, 22Oct 24, 23SEMICONDUCTOR ENERGY LABORATORY CO., LTD
11767609 Low-dislocation bulk GaN crystal and method of fabricating sameMay 03, 21Sep 26, 23Sixpoint Materials, Inc.
11746439 Pressure container for crystal productionApr 05, 18Sep 05, 23JAPAN STEEL WORKS M&E, INC.; Japan as Represented by President of Tohoku University;
11705322 Group III nitride substrate, method of making, and method of useMay 22, 20Jul 18, 23SLT TECHNOLOGIES, INC.

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2025/0101,631 MATERIAL COMPRISING A LAYER OF SELF-ASSEMBLED, ONE-DIMENSIONAL ZNO MICROCRYSTALSJul 21, 22Mar 27, 25Not available
2024/0376,630 METHODS AND DEVICES FOR PREPARING CRYSTAL CLADDINGSJul 23, 24Nov 14, 24MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
2024/0270,788 METHODS DIRECTED TO CRYSTALLINE BIOMOLECULESMar 13, 24Aug 15, 24Not available
2024/0247,406 PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYSTAL GROWN THEREBYJan 19, 24Jul 25, 24Not available
2024/0191,395 GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTALFeb 23, 24Jun 13, 24Kimmon Manufacturing Co. Ltd. and Mitsubishi Chemical Corporation; THE JAPAN STEEL WORKS, LTD.;
2024/0183,074 OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTUREFeb 13, 24Jun 06, 24Not available
2024/0158,948 DIRECT HEATING AND TEMPERATURE CONTROL SYSTEM FOR CRYSTAL GROWTHNov 09, 23May 16, 24Not available
2024/0158,949 STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE PROCESS ENVIRONMENTS AT HIGH PRESSURE AND HIGH TEMPERATURENov 03, 23May 16, 24Not available
2024/0158,950 APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USENov 09, 23May 16, 24Not available
2024/0158,951 APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USENov 09, 23May 16, 24Not available
2024/0159,348 METAL-BASED THERMAL INSULATION STRUCTURESNov 10, 23May 16, 24Not available
2024/0133,076 OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTUREDec 16, 23Apr 25, 24Not available
2024/0105,449 CONDUCTIVE C-PLANE GaN SUBSTRATESep 29, 23Mar 28, 24Kimmon Manufacturing Co. Ltd. and Mitsubishi Chemical Corporation
2024/0026,562 INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTHJul 20, 23Jan 25, 24Not available
2024/0026,563 COMPOUND INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTHJul 20, 23Jan 25, 24Not available
2024/0030,436 MANUFACTURING METHOD OF COMPOSITE OXIDE AND MANUFACTURING METHOD OF POWER STORAGE DEVICESep 27, 23Jan 25, 24Not available
2023/0392,280 GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATEAug 24, 23Dec 07, 23Kimmon Manufacturing Co. Ltd. and Mitsubishi Chemical Corporation; THE JAPAN STEEL WORKS, LTD.; NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;
2023/0115,706 METHODS FOR LOW ENERGY INORGANIC MATERIAL SYNTHESISMay 17, 22Apr 13, 23Rutgers, The State University of New Jersey
2023/0110,306 HEATER FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USEOct 10, 22Apr 13, 23Not available
2022/0380,933 ALUMINA GRAIN, PREPARATION METHOD THEREFOR AND USE THEREOFOct 25, 20Dec 01, 22Not available

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