Class C30B : SINGLE-CRYSTAL GROWTH
Subclass 1/08: Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient Zone recrystallisation
| Patent # | Title | Filing Date | Issue Date | Patent Owner |
|---|---|---|---|---|
| 11810785 | Thin film crystallization process | May 10, 18 | Nov 07, 23 | LUX SEMICONDUCTORS, INC. |
| 10273595 | Method for tailoring the dopant profile in a laser crystal using zone processing | Feb 23, 18 | Apr 30, 19 | Raytheon Company |
| 10060044 | Polarizing apparatus and polarizing method | Oct 11, 16 | Aug 28, 18 | Ricoh Company, Ltd. |
| 9926644 | Method for tailoring the dopant profile in a laser crystal using zone processing | Sep 16, 14 | Mar 27, 18 | Raytheon Company |
| 9834855 | Method for manufacturing monocrystalline graphene | Dec 26, 14 | Dec 05, 17 | KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE |
| 9719186 | Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure | Dec 02, 16 | Aug 01, 17 | UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY |
| 9551087 | Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure | Mar 19, 14 | Jan 24, 17 | UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY |
| 9073781 | Method for depositing a thin layer and product thus obtained | Jan 04, 08 | Jul 07, 15 | SAINT-GOBAIN GLASS FRANCE |
| 8273638 | Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor | Jan 02, 08 | Sep 25, 12 | SAMSUNG DISPLAY CO., LTD. |
| 8119546 | Array substrate, method of manufacturing the same and method of crystallizing silicon | Apr 28, 08 | Feb 21, 12 | SAMSUNG DISPLAY CO., LTD. |
| 7833349 | Phase shifter for laser annealing | May 20, 09 | Nov 16, 10 | SHARP KABUSHIKI KAISHA |
| 7635412 | Crystallizing silicon using a laser beam transmitted through a mask | Jun 22, 04 | Dec 22, 09 | LG DISPLAY CO., LTD. |
| 7097709 | Laser annealing apparatus | Nov 27, 02 | Aug 29, 06 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 6830616 | Manufacturing method of semiconductor and manufacturing method of semiconductor device | Jun 15, 00 | Dec 14, 04 | Semiconductor Energy Laboratory Co., Ltd. |
| 5254208 | Method for manufacturing a semiconductor device | Jul 15, 91 | Oct 19, 93 | Semiconductor Energy Laboratory Co., Ltd. |
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