Class C30B : SINGLE-CRYSTAL GROWTH
Subclass 1/06: Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Recrystallisation under a temperature gradient
| Patent # | Title | Filing Date | Issue Date | Patent Owner |
|---|---|---|---|---|
| 12148616 | Laser annealing method, laser annealing device, and crystallized silicon film substrate | Jan 16, 20 | Nov 19, 24 | V. Technology Co., Ltd. |
| 10166518 | Multi-heater method for growing high quality diamond | Jun 01, 17 | Jan 01, 19 | Sunset Peak International Limited |
| 9401277 | Substrate processing with reduced warpage and/or controlled strain | Jun 07, 13 | Jul 26, 16 | ULTRATECH, INC. |
| 8828138 | FET nanopore sensor | May 17, 10 | Sep 09, 14 | GLOBALFOUNDRIES INC. |
| 7922812 | Method for growing single crystals of metals | Nov 08, 07 | Apr 12, 11 | INTELLECTUAL VENTURES HOLDING 40 LLC |
| 7666767 | Mask for sequential lateral solidification (SLS) process and a method thereof | Jul 31, 06 | Feb 23, 10 | AU OPTRONICS CORPORATION |
| 7018468 | Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing | Nov 13, 03 | Mar 28, 06 | SHARP KABUSHIKI KAISHA |
| 6818059 | Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof | Jul 09, 99 | Nov 16, 04 | LG DISPLAY CO., LTD. |
| 6458199 | Crystallization apparatus and method using non-vacuum process | May 26, 00 | Oct 01, 02 | LG DISPLAY CO., LTD. |
| 6241817 | Method for crystallizing amorphous layer | May 22, 98 | Jun 05, 01 | LG DISPLAY CO., LTD. |
| 6080236 | Electronic device manufacture | Nov 20, 97 | Jun 27, 00 | TPO HONG KONG HOLDING LIMITED |
| 5772754 | Ultrafine particles and production method thereof | Feb 07, 96 | Jun 30, 98 | RESEARCH DEVELOPMENT CORPORATION OF JAPAN, KABUSHIKI KAISHA TOSHIBA, |
| 5443030 | Crystallizing method of ferroelectric film | Oct 11, 94 | Aug 22, 95 | SHARP KABUSHIKI KAISHA |
| 5373803 | Method of epitaxial growth of semiconductor | Sep 30, 92 | Dec 20, 94 | SONY CORPORATION |
| 5365875 | Semiconductor element manufacturing method | Sep 18, 92 | Nov 22, 94 | FUJI XEROX CO., LTD. |
| Publication # | Title | Filing Date | Pub Date | Patent Owner |
|---|---|---|---|---|
| 2020/0370,200 | METHOD OF MANUFACTURING ORIENTED STEEL PLATE | May 22, 20 | Nov 26, 20 | Not available |
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