C30B 1/04

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Class  C30B : SINGLE-CRYSTAL GROWTH


Subclass 1/04: Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) Isothermal recrystallisation

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
11967505 Method for manufacturing sputtering target, method for forming oxide film, and transistorApr 21, 23Apr 23, 24Semiconductor Energy Laboratory Co. Ltd.
11283072 Transition metal composite hydroxide particles and production method thereof, cathode active material for non-aqueous electrolyte rechargeable battery and production method thereof, and nonaqueous electrolyte rechargeable batteryAug 13, 19Mar 22, 22Sumitomo Metal Mining Co. Ltd.
11139166 Method for manufacturing sputtering target, method for forming oxide film, and transistorDec 30, 19Oct 05, 21SEMICONDUCTOR ENERGY LABORATORY CO., LTD
10774002 Method for producing oriented sintered bodyApr 19, 18Sep 15, 20NGK Insulators, Ltd.
10522347 Method for manufacturing sputtering target, method for forming oxide film, and transistorMar 07, 17Dec 31, 19SEMICONDUCTOR ENERGY LABORATORY CO., LTD
10424787 Transition metal composite hydroxide particles and production method thereof, cathode active material for non-aqueous electrolyte rechargeable battery and production method thereof, and nonaqueous electrolyte rechargeable batteryMay 12, 14Sep 24, 19Sumitomo Metal Mining Co. Ltd.
10410914 Methods for providing lithography features on a substrate by self-assembly of block copolymersMay 13, 15Sep 10, 19ASML Netherlands B.V.
10274673 Method and apparatus for producing crystalline cladding and crystalline core optical fibersJan 19, 18Apr 30, 19The Penn State Research Foundation; General Opto Solutions, LLC;
10161061 Potassium sodium niobate ceramics with single crystalSep 09, 16Dec 25, 18Korea Institute of Machinery and Materials
10138166 Alumina sintered body and base substrate for optical deviceMar 02, 17Nov 27, 18NGK Insulators, Ltd.
10087552 Substrate for epitaxial growth, manufacturing method therefor, and substrate for superconducting wireAug 23, 13Oct 02, 18Toyo Kohan Co., Ltd.; Sumitomo Electric Industries, Ltd.;
10060044 Polarizing apparatus and polarizing methodOct 11, 16Aug 28, 18Ricoh Company, Ltd.
9995875 Method and apparatus for producing crystalline cladding and crystalline core optical fibersJul 27, 16Jun 12, 18The Penn State Research Foundation; General Opto Solutions, LLC;
9966256 Film forming method and film forming apparatusSep 03, 15May 08, 18Tokyo Electron Limited
9957162 Ternary inorganic compound crystal and preparation method and application thereofJun 21, 16May 01, 18Shenzhen University
9834854 Production of a spinel materialJul 25, 13Dec 05, 17CSIR
9816198 Method for producing zinc oxide single crystalAug 07, 14Nov 14, 17NGK INSULATORS, LTD.
9816203 Crystalline strontium titanate and methods of forming the sameMay 20, 15Nov 14, 17ASM INTERNATIONAL N.V.
9810980 Graphoepitaxy directed self assemblyFeb 07, 17Nov 07, 17INTERNATIONAL BUSINESS MACHINES CORPORATION, TOKYO ELECTRON LIMITED,
9728708 Piezoelectric materials and methods of property controlOct 18, 12Aug 08, 17DALHOUSIE UNIVERSITY

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2016/0108,546 LARGE-AREA SINGLE-CRYSTAL MONOLAYER GRAPHENE FILM AND METHOD FOR PRODUCING THE SAMEMay 21, 14Apr 21, 16IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

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