Class C30B : SINGLE-CRYSTAL GROWTH
Subclass 1/02: Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)
| Patent # | Title | Filing Date | Issue Date | Patent Owner |
|---|---|---|---|---|
| 12188150 | Method for clonal-growth of single-crystal metal | Jun 04, 19 | Jan 07, 25 | Beijing Peking University WBL Corporation Ltd. |
| 12159781 | Method for manufacturing a composite structure comprising a thin layer made of monocrystalline sic on a carrier substrate made of SiC | Jan 12, 21 | Dec 03, 24 | Soitec |
| 12077879 | Preparation of single-crystal layered cathode materials for lithium- and sodium-ion batteries | Aug 05, 22 | Sep 03, 24 | City University of Hong Kong |
| 12070923 | Substrate for epitaxial growth and method for producing same | Nov 10, 22 | Aug 27, 24 | Toyo Kohan Co. Ltd.; Sumitomo Electric Industries Ltd.; |
| 12051585 | Monolayer graphene on non-polar face SiC substrate and control method thereof | Feb 28, 19 | Jul 30, 24 | Tianjin University |
| 12031072 | Method of producing fluorescent diamond particles | Apr 19, 21 | Jul 09, 24 | ADAMAS NANOTECHNOLOGIES, INC.; Research Foundation of the City University of New York; |
| 11946154 | Dielectric material, device comprising dielectric material, and method of preparing dielectric material | Dec 18, 20 | Apr 02, 24 | Samsung Electronics Co. Ltd. |
| 11846836 | Thin-film electro-optical waveguide modulator device | May 03, 21 | Dec 19, 23 | Applied Materials Inc. |
| 11827998 | Facile etching for single crystal cathode materials | May 26, 21 | Nov 28, 23 | Worcester Polytechnic Institute |
| 11810785 | Thin film crystallization process | May 10, 18 | Nov 07, 23 | LUX SEMICONDUCTORS, INC. |
| 11758817 | Film structure and method for manufacturing the same | May 31, 17 | Sep 12, 23 | KRYSTAL INC. |
| 11680333 | Defect engineered high quality multilayer epitaxial graphene growth with thickness controllability | Feb 14, 14 | Jun 20, 23 | University of South Carolina |
| 11674237 | Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers | May 14, 19 | Jun 13, 23 | International Business Machine Corporation |
| 11591710 | Crystallization of amorphous multicomponent ionic compounds | Oct 01, 20 | Feb 28, 23 | Wisconsin Alumni Research Foundation |
| 11551929 | Method of growing crystalline layers on amorphous substrates using two-dimensional and atomic layer seeds | Mar 25, 21 | Jan 10, 23 | The Penn State Research Foundation |
| 11524486 | Substrate for epitaxtail, growth and method for producing same | Oct 21, 16 | Dec 13, 22 | Toyo Kohan Co. Ltd.; Sumitomo Electric Industries Ltd.; |
| 11408092 | Method for heat-treating silicon single crystal wafer | Dec 25, 18 | Aug 09, 22 | Shin-Etsu Handotai Co Ltd. |
| 11332847 | Methods for low energy inorganic material synthesis | Dec 29, 16 | May 17, 22 | Board of Trustees Rutgers The State University of New Jersey |
| 11282978 | Crystallisation of amorphous silicon from a silicon-rich aluminium substrate | Apr 21, 17 | Mar 22, 22 | Centre National De La Recherche Scientifique (CNRS); UNIVERSITÉ DE STRASBOURG; |
| 11236440 | Copper-zinc-aluminum-iron single crystal alloy material | Dec 03, 19 | Feb 01, 22 | XIAMEN UNIVERSITY |
| Publication # | Title | Filing Date | Pub Date | Patent Owner |
|---|---|---|---|---|
| 2025/0059,678 | SINGLE CRYSTAL MULTI-ELEMENT CATHODE MATERIAL, PREPARATION METHOD OF THE SAME, AND LITHIUM-ION BATTERY | Oct 31, 24 | Feb 20, 25 | Not available |
| 2024/0426,022 | PIEZOELECTRIC EPITAXIALLY GROWN PSEUDOSUBSTRATE, USE AND PROCESS FOR PREPARING SUCH A PSEUDOSUBSTRATE | Jul 21, 22 | Dec 26, 24 | Not available |
| 2024/0401,223 | DISCOVERY OF DOUBLE HELIX AND IMPACT ON NANOSCALE TO MESOSCALE CRYSTALLINE STRUCTURES | May 30, 24 | Dec 05, 24 | Not available |
| 2024/0401,224 | METHOD FOR MANUFACTURING CRYSTALLIZED LAMINATED STRUCTURE | Aug 04, 22 | Dec 05, 24 | Not available |
| 2024/0367,981 | METHOD FOR CONTINUOUS EPITAXY OF CARBON FILM | Nov 01, 22 | Nov 07, 24 | Beijing Peking University WBL Corporation Ltd. |
| 2024/0328,026 | PURIFICATION METHOD FOR COPPER FOIL | Aug 09, 22 | Oct 03, 24 | Not available |
| 2024/0222,114 | METHOD OF FORMING A CONFORMAL AND CONTINUOUS CRYSTALLINE SILICON NANOSHEET WITH IMPROVED ELECTRICAL PROPERTIES AT LOW DOPING LEVELS | Dec 27, 22 | Jul 04, 24 | L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude; American Air Liquide, Inc.; |
| 2024/0158,947 | METHODS AND DEVICES FOR PREPARING SINGLE-CRYSTAL CLADDINGS | Jan 18, 24 | May 16, 24 | MEISHAN BOYA ADVANCED MATERIALS CO., LTD. |
| 2024/0141,544 | SiC SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR | Jan 11, 24 | May 02, 24 | Not available |
| 2024/0140,877 | Material and Process for Fabricating and Shaping of Transparent Ceramics | Mar 28, 22 | May 02, 24 | Not available |
| 2024/0003,042 | SINGLE CRYSTAL YIG NANOFILM FABRICATED BY A METAL ORGANIC DECOMPOSITION EPITAXIAL GROWTH PROCESS | Aug 31, 21 | Jan 04, 24 | Vida Products |
| 2023/0349,065 | SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS | Mar 22, 23 | Nov 02, 23 | Kokusai Electric Corporation |
| 2022/0325,432 | Nano And Quantum Sized Particles From Atomically Thin Transition Metal Dichalcogenides And Related Methods | Feb 18, 22 | Oct 13, 22 | Not available |
| 2022/0228,288 | SINGLE CRYSTAL CATHODE MATERIALS USING MICROWAVE PLASMA PROCESSING | Jan 18, 22 | Jul 21, 22 | Not available |
| 2021/0310,149 | SINGLE CRYSTALLINE METAL FOIL AND MANUFACTURING METHOD THEREFOR | Jun 22, 21 | Oct 07, 21 | Not available |
| 2021/0198,801 | DIELECTRIC MATERIAL, DEVICE COMPRISING DIELECTRIC MATERIAL, AND METHOD OF PREPARING DIELECTRIC MATERIAL | Dec 18, 20 | Jul 01, 21 | Samsung Electronics Co., Ltd. |
| 2021/0189,586 | SELECTIVE EPITAXIAL ATOMIC REPLACEMENT: PLASMA ASSISTED ATOMIC LAYER FUNCTIONALIZATION OF MATERIALS | Dec 18, 20 | Jun 24, 21 | Not available |
| 2021/0062,366 | METHOD FOR HEAT-TREATING SILICON SINGLE CRYSTAL WAFER | Dec 25, 18 | Mar 04, 21 | Shin-Etsu Handotai Co Ltd. |
| 2020/0370,199 | METHOD FOR MAKING MNBI2TE4 SINGLE CRYSTAL | Jul 30, 19 | Nov 26, 20 | Not available |
| 2020/0157,703 | BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON | Jul 25, 19 | May 21, 20 | Mossey Creek Technologies, Inc. |
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