H01L 21/16

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Class  H01L : SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR


Subclass 21/16: Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
11862685 Wafer and method of manufacturing waferFeb 04, 22Jan 02, 24SENIC Inc.
11443944 Method of growing semiconductor layers, method of manufacturing semiconductor device, and method of growing balk crystalApr 27, 20Sep 13, 22DENSO Corporation; NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY;
11316017 Field-effect transistor with a total control of the electrical conductivity on its channelSep 27, 18Apr 26, 22LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)
10964730 Non-contact measurement of a stress in a film on a substrateJan 13, 20Mar 30, 21APPLEJACK 199, L.P.
10644172 Transparent electrode, manufacturing method thereof and electronic device employing the transparent electrodeAug 22, 19May 05, 20KABUSHIKI KAISHA TOSHIBA
10593878 Electronic device and method for fabricating the sameAug 21, 18Mar 17, 20SK hynix, Inc.
10593741 Flexible display deviceDec 06, 17Mar 17, 20Samsung Display Co., Ltd.
10586873 Method for producing field-effect transistorSep 14, 18Mar 10, 20Ricoh Company, Ltd.
10559669 Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to metal electrodeMar 14, 19Feb 11, 20IBM Corporation
10529590 Annealing method for improving bonding strengthFeb 27, 18Jan 07, 20SHANGHAI SIMGUI TECHNOLOGY CO., LTD.
10466545 Method and device for processing photoresist componentAug 17, 17Nov 05, 19BOE Technology Group Co. Ltd.; BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.;
10431702 Transparent electrode, manufacturing method thereof and electronic device employing the transparent electrodeMar 13, 18Oct 01, 19KABUSHIKI KAISHA TOSHIBA
10340391 Semiconductor device and method for fabricating the sameJun 29, 17Jul 02, 19United Microelectronics Corp.
10290719 Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to metal electrodeDec 27, 17May 14, 19IBM Corporation
10263071 Method of manufacturing semiconductor deviceDec 26, 17Apr 16, 19Toyota Jidosha Kabushiki Kaisha
10211240 Method for manufacturing semiconductor deviceDec 11, 17Feb 19, 19SEMICONDUCTOR ENERGY LABORATORY CO., LTD
10192994 Oxide semiconductor film including indium, tungsten and zinc and thin film transistor deviceAug 21, 15Jan 29, 19Sumitomo Electric Industries Ltd.
10170599 Semiconductor device including insulating films with different thicknesses and method for manufacturing the semiconductor deviceMay 05, 16Jan 01, 19SEMICONDUCTOR ENERGY LABORATORY CO., LTD
10170600 Method for manufacturing semiconductor deviceJan 02, 18Jan 01, 19SEMICONDUCTOR ENERGY LABORATORY CO., LTD
10158026 Semiconductor device including oxide semiconductor stacked layersSep 12, 16Dec 18, 18SEMICONDUCTOR ENERGY LABORATORY CO., LTD

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2024/0079,238 BONDED OBJECT PRODUCTION METHOD AND PRODUCTION METHOD FOR CERAMIC CIRCUIT SUBSTRATE USING SAMENov 14, 23Mar 07, 24KABUSHIKI KAISHA TOSHIBA; Toshiba Materials Co. Ltd.;
2011/0062,433 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOFSep 13, 10Mar 17, 11Semiconductor Energy Laboratory Co., Ltd.
2011/0062,435 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAMESep 13, 10Mar 17, 11Semiconductor Energy Laboratory Co., Ltd.

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