Class H01L : SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass 21/02: Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof Manufacture or treatment of semiconductor devices or of parts thereof
| Patent # | Title | Filing Date | Issue Date | Patent Owner |
|---|---|---|---|---|
| 12263452 | Gas solution supply device | Sep 29, 21 | Apr 01, 25 | Ebara Corporation |
| 12264275 | Treatment liquid | Aug 23, 22 | Apr 01, 25 | FUJIFILM Corporation |
| 12265046 | Heterostructure semiconductor, chemiresistive gas sensor made thereof, and method of fabrication thereof | Aug 10, 21 | Apr 01, 25 | Indian Institute of Science |
| 12265328 | Photoactive, inorganic ligand-capped inorganic nanocrystals | Jun 12, 23 | Apr 01, 25 | The Argonne National Laboratory The University of Chicago Development |
| 12266520 | Method for manufacturing epitaxial wafer, silicon-based substrate for epitaxial growth, and epitaxial wafer | Sep 06, 19 | Apr 01, 25 | Shin-Etsu Handotai Co Ltd. |
| 12266521 | Oxide-nitride-oxide stack having multiple oxynitride layers | Sep 15, 22 | Apr 01, 25 | LONGITUDE FLASH MEMORY SOLUTIONS LTD. |
| 12266522 | Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium | Jan 19, 24 | Apr 01, 25 | Kokusai Electric Corporation |
| 12266523 | Parasitic capacitance reduction in GaN-on-silicon devices | Feb 05, 24 | Apr 01, 25 | MACOM Technology Solutions Holdings, Inc. |
| 12266524 | Method for depositing boron containing silicon germanium layers | Jun 11, 21 | Apr 01, 25 | ASM IP Holding B.V. |
| 12266525 | Photomask pellicle including network of nanowires and method of forming the same | Jan 30, 24 | Apr 01, 25 | Taiwan Semiconductor Manufacturing Company Ltd. |
| 12266526 | Formation of single crystal semiconductors using planar vapor liquid solid epitaxy | Oct 03, 23 | Apr 01, 25 | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 12266533 | Sacrificial capping layer for contact etch | Apr 15, 22 | Apr 01, 25 | Tokyo Electron Limited |
| 12266535 | Mask encapsulation to prevent degradation during fabrication of high aspect ratio features | Sep 23, 20 | Apr 01, 25 | Lam Researh Corporation |
| 12266538 | Method for manufacturing semiconductor device using etchant composition having high etching selectivity | Feb 17, 22 | Apr 01, 25 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 12266540 | Method for fabricating layer structure having target topological profile | Dec 06, 23 | Apr 01, 25 | ASM IP Holding B.V. |
| 12266541 | Semiconductor device and method | Jun 17, 21 | Apr 01, 25 | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 12266567 | Method of forming a barrier layer in an interconnect structure of semiconductor device | Apr 27, 22 | Apr 01, 25 | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 12266573 | Transistor isolation regions and methods of forming the same | Sep 23, 21 | Apr 01, 25 | Taiwan Semiconductor Manufacturing Company Ltd. |
| 12266576 | Semiconductor device and methods of manufacture | Jul 18, 22 | Apr 01, 25 | Taiwan Semiconductor Manufacturing Company Ltd. |
| 12266579 | Method and system for adjusting the gap between a wafer and a top plate in a thin-film deposition process | Aug 30, 21 | Apr 01, 25 | Taiwan Semiconductor Manufacturing Co., Ltd. |
| Publication # | Title | Filing Date | Pub Date | Patent Owner |
|---|---|---|---|---|
| 2025/0118,539 | METHOD TO IMPROVE WAFER EDGE UNIFORMITY | Oct 16, 24 | Apr 10, 25 | Applied Materials Inc. |
| 2025/0118,547 | METHODS OF FORMING MEMORY STRUCTURES FOR THREE-DIMENSIONAL NONVOLATILE MEMORY | Oct 04, 24 | Apr 10, 25 | Not available |
| 2025/0118,548 | HEAT DISSIPATION FOR FIELD EFFECT TRANSISTORS | Jan 03, 24 | Apr 10, 25 | Not available |
| 2025/0118,549 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF CONTROLLING FILM THICKNESS DISTRIBUTION | Dec 19, 24 | Apr 10, 25 | Kokusai Electric Corporation |
| 2025/0118,550 | SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS | Dec 16, 24 | Apr 10, 25 | Not available |
| 2025/0118,551 | SEED CRYSTAL SUBSTRATE AND GRAPHITE SUSCEPTOR WITH SEED CRYSTAL SUBSTRATE | Jul 25, 24 | Apr 10, 25 | KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO |
| 2025/0118,552 | METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER | Oct 09, 24 | Apr 10, 25 | Commissariat A L' Energie Atomique Et Aux Energies Alternatives; Centre National De La Recherche Scientifique (CNRS); UNIVERSITE GRENOBLE ALPES; INSTITUT POLYTECHNIQUE DE GRENOBLE; |
| 2025/0118,553 | 2D Material Stack Formation | Oct 02, 24 | Apr 10, 25 | Not available |
| 2025/0118,554 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR SUBSTRATE, AND CONTROL DEVICE | Jan 26, 23 | Apr 10, 25 | KYOCERA CORPORATION |
| 2025/0118,562 | DEPOSITION OF ORGANIC FILMS | Dec 16, 24 | Apr 10, 25 | Not available |
| 2025/0118,564 | Method for Thinning a Semiconductor Substrate | Oct 04, 24 | Apr 10, 25 | Not available |
| 2025/0118,568 | REDUCED TEMPERATURE ETCHING OF DOPED SILICON OXIDE | May 23, 23 | Apr 10, 25 | Not available |
| 2025/0118,576 | CHAMBER KITS, PROCESSING CHAMBERS, AND METHODS FOR GAS ACTIVATION IN SEMICONDUCTOR MANUFACTURING | Dec 20, 23 | Apr 10, 25 | Not available |
| 2025/0118,613 | HEMT TRANSISTOR | Sep 20, 24 | Apr 10, 25 | Not available |
| 2025/0115,691 | METHOD OF FORMING PATTERNS | Dec 16, 24 | Apr 10, 25 | Not available |
| 2025/0115,786 | POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND POLISHING METHOD OF SUBSTRATE USING THE SAME | Sep 30, 24 | Apr 10, 25 | SK enpulse Co., Ltd. |
| 2025/0120,061 | 3D DRAM WITH ENLARGE-LESS TRIM | Oct 03, 24 | Apr 10, 25 | Applied Materials Inc. |
| 2025/0120,068 | PRECURSOR STRUCTURE FOR SELF-ALIGNED BIT LINE AND STORAGE NODE CONTACTS FOR 4F2 DRAM | Oct 02, 24 | Apr 10, 25 | Applied Materials Inc. |
| 2025/0120,130 | SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE | Sep 04, 24 | Apr 10, 25 | Samsung Electronics Co., Ltd. |
| 2025/0120,150 | THIN FILM STRUCTURE AND METHOD OF MANUFACTURING THE THIN FILM STRUCTURE | May 24, 24 | Apr 10, 25 | Samsung Electronics Co., Ltd. |
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