G11C 7/14

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Description

Class  G11C : STATIC STORES


Subclass 7/14: Arrangements for writing information into, or reading information out from, a digital store (G11C 5/00 takes precedence; auxiliary circuits for stores using semiconductor devices G11C 11/4063, G11C 11/413, G11C 11/4193) Dummy cell management; Sense reference voltage generators

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
12249397 Computing in memory electronic device capable of supporting current based analog multiply-accumulation operations and time based analog-to-digital conversionNov 15, 22Mar 11, 25Korea University Research and Business Foundation
12211582 Signed and binary weighted computation for an in-memory computation systemApr 12, 22Jan 28, 25STMicroelectronics S.r.l.
12205671 Circuit structure and related method to compensate for sense amplifier leakageJul 27, 22Jan 21, 25GLOBALFOUNDRIES U.S. Inc.
12205672 Managing reference currents in semiconductor devicesDec 06, 22Jan 21, 25Macronix International Co., Ltd.
12200927 Memory device including reference bit line for increasing read operation accuracyJan 14, 22Jan 14, 25SUNRISE MEMORY CORPORATION
12190949 Memory circuit and method of operating the sameMay 12, 23Jan 07, 25TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
12190955 Memory device with dummy word line, system and method for programming thereofAug 04, 22Jan 07, 25Yangtze Memory Technologies Co., Ltd.
12183380 Read operations based on a dynamic referenceJun 29, 21Dec 31, 24Micron Technology Inc.
12183426 Power supply circuit of semiconductor device, semiconductor device having the same, and method for adjusting operation voltage of deviceMar 03, 22Dec 31, 24Kioxia Corporation
12183427 System and method for write clock double data rate duty cycle correctionOct 17, 22Dec 31, 24Cadence Design Systems Inc.
12183428 Memory circuit and method of operating the sameJul 25, 23Dec 31, 24TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.; TSMC CHINA COMPANY, LIMITED;
12159682 Multi-level cells, and related arrays, devices, systems, and methodsJun 02, 22Dec 03, 24Micron Technology Inc.
12154616 Memory device and operation method thereofOct 24, 23Nov 26, 24Samsung Electronics Co. Ltd.
12154656 Error pin training with graphics DDR memoryJun 30, 22Nov 26, 24Advanced Micro Devices Inc.
12142343 Memory devices for multiple read operationsAug 11, 23Nov 12, 24Micron Technology Inc.
12142345 Page buffer, memory device having page buffer, and method of operating memory deviceJul 28, 22Nov 12, 24SK hynix Inc.; Korea Advanced Institute of Science and Technology;
12136922 Integrated resistor network and method for fabricating the sameNov 17, 23Nov 05, 24Infineon Technologies LLC
12119049 Memory controller performing data training, system-on-chip including the memory controller, and operating method of the memory controllerOct 19, 23Oct 15, 24Samsung Electronics Co. Ltd.
12119081 Semiconductor storage device and control method of semiconductor storage deviceJan 09, 23Oct 15, 24Fujitsu Limited
12112794 Memory device having variable impedance memory cells and time-to-transition sensing of data stored thereinApr 08, 23Oct 08, 24R&D 3 LLC

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2025/0095,704 MEMORY DEVICE HAVING TRACKING WORD LINE WITH ADJUST CIRCUIT, METHOD OF OPERATING SAME AND METHOD OF MANUFACTURING SAMESep 21, 23Mar 20, 25Not available
2025/0095,765 ERROR CONDITION MONITORING IN MEMORY SYSTEMSSep 15, 23Mar 20, 25Not available
2025/0069,665 MEMORY DEVICE, SYSTEM AND METHOD OF OPERATING THE SAMENov 14, 24Feb 27, 25Not available
2025/0029,641 MEMORY DEVICES FOR MULTIPLE READ OPERATIONSOct 09, 24Jan 23, 25Micron Technology Inc.
2025/0022,504 MEMORY DEVICE AND OPERATION METHOD THEREOFSep 30, 24Jan 16, 25Not available
2024/0395,299 OFFSET CANCELLATIONJun 06, 24Nov 28, 24Not available
2024/0386,925 MEMORY ARRAY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATING A MEMORY ARRAY CIRCUITJul 30, 24Nov 21, 24Taiwan Semiconductor Manufacturing Company Ltd.
2024/0347,083 TECHNIQUES TO MITIGATE MEMORY DIE MISALIGNMENTMar 22, 24Oct 17, 24Not available
2024/0331,750 Semiconductor Device and Method of Operating the SameJun 11, 24Oct 03, 24Not available
2024/0321,324 MEMORY DEVICE INCLUDING VOLTAGE AND TEMPERATURE SENSING CIRCUIT AND METHOD FOR MANAGING OPERATION THEREOFOct 02, 23Sep 26, 24Not available
2024/0321,330 STORAGE DEVICE INCLUDING BUFFER CHIP AND METHOD FOR PER-PIN TRAINING USING BUFFER CHIPMar 20, 24Sep 26, 24Samsung Electronics Co. Ltd.
2024/0304,227 TECHNIQUES TO CONFIGURE DRIVERSMar 06, 24Sep 12, 24Not available
2024/0304,268 APPARATUS AND METHOD FOR PERFORMING SELF-CALIBRATION OF RECEIVER OFFSET WITHOUT SHORTING DIFFERENTIAL INPUT TERMINALS OF RECEIVERDec 15, 23Sep 12, 24FARADAY TECHNOLOGY CORP.
2024/0296,876 MEMORY SYSTEMS AND DEVICES THAT SUPPORT METHODS FOR CALIBRATING INPUT OFFSETS THEREINSep 12, 23Sep 05, 24Not available
2024/0290,383 SYSTEM AND METHOD APPLIED WITH COMPUTING-IN-MEMORYMay 06, 24Aug 29, 24TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
2024/0282,351 OUTPUT BLOCK FOR ARRAY OF NON-VOLATILE MEMORY CELLSMay 09, 23Aug 22, 24Not available
2024/0274,168 SEMICONDUCTOR DEVICE AND TRAINING METHOD OF THE SEMICONDUCTOR DEVICEOct 30, 23Aug 15, 24SK HYNIX INC.
2024/0274,171 PAGE BUFFER PERFORMING MEMORY OPERATIONAug 08, 23Aug 15, 24Not available
2024/0274,173 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAMEOct 31, 23Aug 15, 24Samsung Electronics Co., Ltd.
2024/0257,843 MEMORY DEVICE AND OPERATING METHOD THEREOFAug 07, 23Aug 01, 24SAMSUNG ELECTRONICS CO., LTD

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