G11C 7/06

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Description

Class  G11C : STATIC STORES


Subclass 7/06: Arrangements for writing information into, or reading information out from, a digital store (G11C 5/00 takes precedence; auxiliary circuits for stores using semiconductor devices G11C 11/4063, G11C 11/413, G11C 11/4193) Sense amplifiers; Associated circuits (amplifiers per seH03F, H03K)

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
12266404 Semiconductor storage deviceMay 02, 24Apr 01, 25Kioxia Corporation
12260130 Memory device for computing in-memoryJan 31, 23Mar 25, 25Macronix International Co. Ltd.
12260921 Sense amplifier architecture providing reduced program verification timeJun 10, 22Mar 25, 25SanDisk Technologies LLC
12254924 Differentiable content addressable memoryJul 28, 22Mar 18, 25Hewlett Packard Enterprise Development LP
12254949 Memory deviceMay 09, 23Mar 18, 25Macronix International Co. Ltd.
12249391 Latch type sense amplifierNov 08, 23Mar 11, 25TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
12243581 Output driver level-shifting latch circuit for dual-rail memoryFeb 16, 23Mar 04, 25Synopsys, Inc.
12243592 One time programmable memoryMay 15, 23Mar 04, 25Taiwan Semiconductor Manufacturing Company Ltd.
12243598 Semiconductor storage device and program operation method for a select gate line of the semiconductor storage deviceFeb 28, 23Mar 04, 25Kioxia Corporation
12243614 Single ended sense amplifier with current pulse circuitOct 17, 22Mar 04, 25GLOBALFOUNDRIES U.S. Inc.
12237000 Sense amplifier circuit with precharge, memory device including the same and sensing method of memory deviceOct 12, 22Feb 25, 25Samsung Electronics Co., Ltd.
12237038 Local sensing amplifier and memoryJul 19, 22Feb 25, 25CHANGXIN MEMORY TECHNOLOGIES, INC.
12229435 Memory component with input/output data rate alignmentJan 15, 24Feb 18, 25RAMBUS INC.
12230346 Cross-point memory read technique to mitigate drift errorsJun 25, 21Feb 18, 25Intel Corp.
12230352 Memory device, memory cell read circuit, and control method for mismatch compensationNov 23, 23Feb 18, 25Taiwan Semiconductor Manufacturing Company Ltd.
12230354 Apparatuses and methods for scatter and gatherOct 21, 22Feb 18, 25Not available
12223328 Generating and executing a control flowAug 10, 23Feb 11, 25Not available
12224033 Memory systemMar 03, 23Feb 11, 25Kioxia Corporation
12217813 Apparatuses and methods for tracking word line accessesAug 24, 22Feb 04, 25Not available
12211551 Semiconductor memory deviceMar 02, 23Jan 28, 25Kioxia Corporation

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2025/0118,342 SENSE AMPLIFIERS AND OPERATION METHODS THEREOF, AND MEMORY DEVICES INCLUDING THE SAMEApr 12, 24Apr 10, 25Not available
2025/0118,358 APPARATUSES AND METHODS FOR SINGLE AND MULTI MEMORY CELL ARCHITECTURESJun 18, 24Apr 10, 25Micron Technology Inc.
2025/0104,748 MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE, AND PAGE BUFFER INCLUDED IN MEMORY DEVICEDec 06, 24Mar 27, 25Samsung Electronics Co., Ltd.
2025/0095,698 HIGH SPEED MEMORY CIRCUIT ARCHITECTURE WITH IMPROVED AREA AND POWER EFFICIENCYSep 19, 23Mar 20, 25Not available
2025/0087,257 CIRCUIT MODULE WITH IMPROVED TIMING CONTROLSep 10, 24Mar 13, 25Not available
2025/0078,948 TECHNIQUES FOR INITIALIZING MEMORY ERROR CORRECTIONNov 19, 24Mar 06, 25Not available
2025/0080,366 Memory Device and Memory System Having the SameMar 07, 24Mar 06, 25Samsung Electronics Co., Ltd.
2025/0069,627 SENSE AMPLIFIER, MEMORY DEVICE AND OPERATION METHOD THEREOFNov 05, 24Feb 27, 25Taiwan Semiconductor Manufacturing Company Ltd.
2025/0070,764 SENSE AMPLIFIER FLIP-FLOP AND INTEGRATED CIRCUIT INCLUDING THE SAMEAug 22, 24Feb 27, 25Research & Business Foundation Sungkyunkwan University
2025/0047,512 LEAKAGE-BASED PHYSICAL UNCLONABLE FUNCTION (L-PUF) DEVICE, L-PUF ARRAY AND APPLICATIONS THEREOFAug 01, 24Feb 06, 25Not available
2025/0047,513 SELF-TIMED READOUT DRIVER FOR LEAKAGE-BASED PHYSICAL UNCLONABLE FUNCTION (L-PUF) DEVICE, L-PUF ARRAY USING SAME, AND APPLICATIONS THEREOFAug 01, 24Feb 06, 25Not available
2025/0037,747 APPARATUSES AND METHODS FOR PERFORMING LOGICAL OPERATIONS USING SENSING CIRCUITRYOct 17, 24Jan 30, 25Not available
2025/0037,756 SENSE AMPLIFIER WITH DIGIT LINE MULTIPLEXINGAug 01, 24Jan 30, 25Not available
2024/0420,741 VALIDATION OF DRAM CONTENT USING INTERNAL DATA SIGNATUREAug 27, 24Dec 19, 24Not available
2024/0412,775 COMPARISON OPERATIONS IN MEMORYApr 19, 24Dec 12, 24Not available
2024/0413,100 STACKED TRANSISTOR PHYSICALLY UNCLONABLE FUNCTIONNov 15, 23Dec 12, 24Not available
2024/0404,567 INDUCTIVE ENERGY HARVESTING AND SIGNAL DEVELOPMENT FOR A MEMORY DEVICEJun 04, 24Dec 05, 24Not available
2024/0395,290 STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICEJul 31, 24Nov 28, 24Taiwan Semiconductor Manufacturing Co., Ltd.
2024/0395,291 SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICESep 25, 23Nov 28, 24SK HYNIX INC.
2024/0395,298 SEMICONDUCTOR DEVICEAug 05, 24Nov 28, 24Not available

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