G03F 1/30

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Class  G03F : PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR


Subclass 1/30: Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof Phase shift masks [PSM]; PSM blanks; Preparation thereof Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Recent Patents

Patent #TitleFiling DateIssue DatePatent Owner
12025912 Phase shift mask for EUV lithography and manufacturing method for the phase shift maskNov 17, 21Jul 02, 24SK HYNIX INC.
11763061 Method of making semiconductor device and semiconductor deviceJul 28, 22Sep 19, 23TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
11734490 Method for determining curvilinear patterns for patterning deviceDec 29, 21Aug 22, 23ASML NETHERLANDS B.V.
11573494 Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskNov 09, 20Feb 07, 23TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
11443093 Semiconductor deviceAug 30, 19Sep 13, 22TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
11429027 Photolithography method and apparatusAug 07, 19Aug 30, 22Taiwan Semiconductor Manufacturing Co., Ltd.
11385537 Phase shift mask and electronic component manufacturing methodOct 26, 18Jul 12, 22BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.; BOE Technology Group Co. Ltd.;
11232249 Method for determining curvilinear patterns for patterning deviceFeb 28, 19Jan 25, 22ASML Netherlands B.V.
11133254 Hybrid power rail structureSep 03, 19Sep 28, 21TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
10872659 Memory system having write assist circuit including memory-adapted transistorsFeb 03, 20Dec 22, 20TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
10859903 Alternating phase shift maskDec 15, 17Dec 08, 20Seagate Technology LLC
10831104 Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskDec 27, 19Nov 10, 20TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
10816891 Photomask and fabrication method thereforApr 06, 17Oct 27, 20TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
10684544 Optical proximity correction (OPC) method and method of manufacturing mask by using the OPC methodJul 05, 18Jun 16, 20Samsung Electronics Co., Ltd.
10634990 Photomask and methods for manufacturing and correcting photomaskJul 11, 19Apr 28, 20Dai Nippon Printing Co Ltd.
10553275 Device having write assist circuit including memory-adapted transistors and method for making the sameApr 10, 18Feb 04, 20TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
10520818 Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskSep 18, 18Dec 31, 19TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
10409170 Method for quickly establishing lithography process condition by a pre-compensation valueOct 31, 17Sep 10, 19SHANGHAI HUALI MICROELECTRONICS CORPORATION
10394118 Photomask and methods for manufacturing and correcting photomaskJul 12, 18Aug 27, 19Dai Nippon Printing Co Ltd.
10365555 Mask blank, transfer mask and methods of manufacturing the sameMay 19, 14Jul 30, 19501 Hoya Corporation

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Recent Publications

Publication #TitleFiling DatePub DatePatent Owner
2024/0337,919 MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICEJun 30, 22Oct 10, 24501 Hoya Corporation
2024/0310,717 PHASE SHIFT MASK FOR EUV LITHOGRAPHY AND MANUFACTURING METHOD FOR THE PHASE SHIFT MASKMay 20, 24Sep 19, 24SK HYNIX INC.
2019/0302,604 MASK BLANK, PHASE SHIFT MASK, METHOD OF MANUFACTURING PHASE SHIFT MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICESep 04, 17Oct 03, 19501 Hoya Corporation

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Patents Issued To Date - By Filing Year

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