Magnetoresistive stack and method of fabricating same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO RE50331
SERIAL NO

17658470

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Abstract

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A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

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Patent Owner(s)

  • EVERSPIN TECHNOLOGIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Houssameddine, Dimitri Latham, US 81 620
Mancoff, Frederick Chandler, US 12 249
Rizzo, Nicholas Gilbert, US 41 687
Slaughter, Jon Slingerlands, US 83 1393
Sun, Jijun Chandler, US 60 1086
Whig, Renu Chandler, US 52 697

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