Electron beam resist composition

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United States of America

PATENT NO RE50296
SERIAL NO

17382172

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Abstract

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The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.

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Patent Owner(s)

  • THE UNIVERSITY OF MANCHESTER

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lewis, Scott Manchester, GB 57 1428
Winpenny, Richard Manchester, GB 9 11
Yeates, Stephen Manchester, GB 11 99

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