Three-dimensional nonvolatile memory cell structure

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United States of America

PATENT NO RE50124
SERIAL NO

17470119

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A three-dimensional integrated circuit non-volatile memory array includes a memory array of vertical channel NAND flash strings connected between a substrate source line and upper layer connection lines which each include n-type drain regions and p-type body line contact regions alternately disposed on each side of undoped or lightly doped string body regions so that each NAND flash string includes a vertical string body portion connected to a horizontal string body portion formed from the string body regions of the upper body connection lines.

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Patent OwnerAddress
MOSAID TECHNOLOGIES INCORPORATED515 LEGGET DRIVE SUITE 100 OTTAWA K2K 3G4

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rhie, Hyoung Seub Ottawa, CA 37 655

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