Reusable nitride wafer, method of making, and use thereof
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United States of America Patent
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Oct 3, 2023
Grant Date -
N/A
app pub date -
Sep 4, 2020
filing date -
Sep 4, 2020
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.
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International Classification(s)
- 2020 Application Filing Year
- H01L Class
- 29783 Applications Filed
- 21134 Patents Issued To-Date
- 70.96 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 2 Age
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