Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same
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United States of America Patent
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Aug 22, 2023
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Jun 15, 2020
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Apr 12, 2016
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Abstract
Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.
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