Structure for radio-frequency applications

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United States of America Patent

PATENT NO RE49365
SERIAL NO

16920274

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Abstract

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A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; a mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.

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Patent Owner(s)

Patent OwnerAddress
SOITECPARC TECHNOLOGIQUE DES FONTAINES CHEMIN DES FRANQUES BERNIN 38190

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Desbonnets, Eric Lumbin, FR 25 54
Kononchuk, Oleg Theys, FR 89 317
Van, Den Daele William Grenoble, FR 2 6

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