Memory element, memory apparatus
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United States of America Patent
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Jan 10, 2023
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N/A
app pub date -
Mar 6, 2020
filing date -
Mar 6, 2020
priority date (Note) -
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Abstract
A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.
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