Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device
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United States of America Patent
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May 26, 2020
Grant Date -
N/A
app pub date -
Apr 6, 2018
filing date -
Nov 15, 2010
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SAMSUNG ELECTRONICS CO LTD | 129 SAMSUNG-RE YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chang, Hong Seok | Seoul, KR | 9 | 34 |
# of filed Patents : 9 Total Citations : 34 | |||
Kim, Chul Bum | Seoul, KR | 13 | 87 |
# of filed Patents : 13 Total Citations : 87 | |||
Kim, Hyung Gon | Hwaseong-si, KR | 26 | 111 |
# of filed Patents : 26 Total Citations : 111 | |||
Lee, Chul Ho | Suwon-si, KR | 64 | 291 |
# of filed Patents : 64 Total Citations : 291 |
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