Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device

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United States of America Patent

PATENT NO RE48013
SERIAL NO

15946985

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Abstract

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A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RE YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Hong Seok Seoul, KR 9 34
Kim, Chul Bum Seoul, KR 13 87
Kim, Hyung Gon Hwaseong-si, KR 26 111
Lee, Chul Ho Suwon-si, KR 64 291

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges15632614176603113125121301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +02004006008001000120014001600180020002200240026002800

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