Method of forming semiconductor patterns
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United States of America Patent
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Dec 18, 2018
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N/A
app pub date -
Jul 12, 2013
filing date -
Jul 12, 2013
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Abstract
Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.
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