Polycrystalline group III metal nitride with getter and method of making
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 6, 2018
Grant Date -
N/A
app pub date -
Mar 24, 2017
filing date -
Mar 24, 2017
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SLT TECHNOLOGIES INC | C/O LOEB & LOEB 10100 SANTA MONICA BLVD SUITE 2200 LOS ANGELES CA 90067 |
International Classification(s)

- 2017 Application Filing Year
- C01B Class
- 2099 Applications Filed
- 1477 Patents Issued To-Date
- 70.37 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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D'Evelyn, Mark P | Santa Barbara, US | 113 | 5838 |
# of filed Patents : 113 Total Citations : 5838 | |||
Kamber, Derrick S | Goleta, US | 31 | 735 |
# of filed Patents : 31 Total Citations : 735 |
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Patent Citation Ranking
- 6 Citation Count
- C01B Class
- 31.00 % this patent is cited more than
- 7 Age
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