Current switched magnetoresistive memory cell
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United States of America Patent
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May 6, 2014
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N/A
app pub date -
Sep 14, 2012
filing date -
May 15, 2001
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Abstract
A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film. A disruption layer is positioned on the other side of the memory film so that conduction electrons spins passing therefrom are substantially random in orientation. The magnitude of currents needed to operate the cell can be reduced using coincident thermal pulses to raise the cell temperature.
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