High power semiconductor laser diode
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United States of America Patent
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Sep 7, 2010
Grant Date -
N/A
app pub date -
Feb 13, 2004
filing date -
Nov 27, 1996
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Abstract
. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.
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