Fabrication of B/C/N/O/Si doped sputtering targets
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United States of America Patent
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Feb 26, 2008
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N/A
app pub date -
Nov 2, 2004
filing date -
Jul 23, 2002
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Abstract
The present invention relates to a method of manufacturing sputtering targets doped with non-metal components including boron, carbon, nitrogen, oxygen and silicon. A powder process is utilized whereby alloyed powders, which contain non-metal elements of B/C/N/O/Si and non-metal containing phases of less than ten microns in microstructure, are blended, canned and subjected to hot isostatic press consolidation. The sputtering targets of the present invention avoid spitting problems during sputtering of the target material on a substrate.
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