Method of fabricating Group III-V compound semiconductor devices using selective etching
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United States of America
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Apr 6, 1999
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N/A
app pub date -
Dec 5, 1996
filing date -
Mar 25, 1993
priority date (Note) -
Expired
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Abstract
A solution of hydrogen peroxide ?H.sub.2 O.sub.2 !, citric acid ?HOC(CH.sub.2 COOH).sub.2 COOH.H.sub.2 O!, and a salt of citric acid such as potassium citrate ?HOC(CH.sub.2 COOK).sub.2 COOK.H.sub.2 O!, and hydrogen peroxide ?H.sub.2 O.sub.2 !, in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, Al.sub.y Ga.sub.1-y As is selectively etched in the presence of Al.sub.x Ga.sub.1-x As (0.ltoreq.y<0.2 & x>0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (I.sub.dss) and threshold voltage (V.sub.th) uniformity.
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