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United States of America Design
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Feb 13, 2018
Grant Date -
N/A
app pub date -
Jul 25, 2017
filing date -
May 3, 2016
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
CURT G JOA INC | 100 CROCKER AVE SHEBOYGAN FALLS WI 53085 |
International Classification(s)

- 2017 Application Filing Year
- 0799 Class
- 253 Applications Filed
- 253 Patents Issued To-Date
- 100 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Buckman, Mark | Sheboygan Falls, US | 3 | 7 |
# of filed Patents : 3 Total Citations : 7 | |||
Kiela,, II Gene F | Plymouth, US | 4 | 13 |
# of filed Patents : 4 Total Citations : 13 | |||
Schwartz, James | Cascade, US | 11 | 26 |
# of filed Patents : 11 Total Citations : 26 |
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Patent Citation Ranking
- 2 Citation Count
- 0799 Class
- 0 % this patent is cited more than
- 7 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
---|---|---|---|---|
7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Aug 13, 2025 |
11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Aug 13, 2029 |
Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge - 7.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text
US Patent No: 9887266
Ultra-low drain-source resistance power MOSFET
Abstract
Ultra-low drain-source resistance power MOSFET. In accordance with an embodiment of the preset invention, a semiconductor device comprises a plurality of trench power MOSFETs. The plurality of trench power MOSFETs is formed in a second epitaxial layer. The second epitaxial layer is formed adjacent and contiguous to a first epitaxial layer. The first epitaxial layer is formed adjacent and contiguous to a substrate highly doped with red Phosphorus. The novel red Phosphorus doped substrate enables a desirable low drain-source resistance.
Description
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Legal Events
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May 09, 2023 | MAFP | MAINTENANCE FEE PAYMENT | free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY year of fee payment: 8 |
Apr 02, 2019 | MAFP | MAINTENANCE FEE PAYMENT | free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY year of fee payment: 4 |
Nov 10, 2015 | I | Issuance | |
Oct 21, 2015 | STCF | INFORMATION ON STATUS: PATENT GRANT | free format text: PATENTED CASE |
Aug 25, 2015 | AS | ASSIGNMENT | free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CENOVUS FCCL LTD.;REEL/FRAME:036638/0181 Owner name: FCCL PARTNERSHIP, CANADA Effective Date: Aug 25, 2015 |
Aug 06, 2013 | AS | ASSIGNMENT | free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:PRICE, GLENN ROBERT;SUN, SUSAN WEI;WASYLYK, MICHAEL JOHN;SIGNING DATES FROM 20130702 TO 20130710;REEL/FRAME:030953/0553 Owner name: CENOVUS FCCL LTD., AS OPERATOR FOR FCCL PARTNERSHI |
Jun 27, 2013 | P | Published | |
Dec 20, 2012 | F | Filing |

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