Polishing apparatus and polished-state monitoring method
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United States of America Patent
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Jun 19, 2018
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app pub date -
Jul 9, 2014
filing date -
Jul 11, 2013
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Abstract
A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness.
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