Method for manufacturing transistor according to selective printing of dopant
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United States of America Patent
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Jun 12, 2018
Issued Date -
Jul 13, 2017
app pub date -
Jul 14, 2015
filing date -
Jul 17, 2014
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Abstract
The present invention relates to a method for manufacturing a transistor according selective printing of a dopant. For the manufacture of a transistor, a semiconductor layer is formed on a substrate, and a dopant layer is formed on the semiconductor layer. In the formation of the dopant layer, an inkjet printing is used to selectively print an n type dopant or a p type dopant.
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