Semiconductor nanocrystals and methods of preparation

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United States of America Patent

PATENT NO 9997706
APP PUB NO 20130273247A1
SERIAL NO

13913108

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Abstract

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A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed. In certain embodiments, a semiconductor nanocrystal includes one or more Group IIIA and one or more Group VA elements.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG RESEARCH AMERICA INC665 CLYDE AVENUE MOUNTAIN VIEW CA 94043

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  • 2013 Application Filing Year
  • C09K Class
  • 2036 Applications Filed
  • 1761 Patents Issued To-Date
  • 86.50 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2013201420152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kamplain, Justin W Bartlesville, US 13 53
Zhu, Zhengguo Chelmsford, US 42 707

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2915334913552101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 700255075100125150175200225250275300325350375400425450475500525550575

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