Semiconductor device, a micro-electro-mechanical resonator and a method for manufacturing a semiconductor device

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United States of America Patent

PATENT NO 9997595
SERIAL NO

15044446

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Abstract

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A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES DRESDEN GMBH & CO KGKOENIGSBRUECKER STR 180 DRESDEN 01099

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kautzsch, Thoralf Dresden, DE 92 375

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