Gallium nitride based high electron mobility transistor (GaN-HEMT) device with an iron-doped cap layer and method of manufacturing the same

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United States of America Patent

PATENT NO 9997594
APP PUB NO 20170125516A1
SERIAL NO

15272993

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Abstract

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A compound semiconductor device includes: a GaN-based channel layer; a barrier layer of nitride semiconductor above the channel layer; and a cap layer of nitride semiconductor above the barrier layer, wherein the cap layer includes: a first region doped with Fe; and a second region above the first region, a concentration of Fe in the second region being lower than a concentration of Fe in the first region.

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Patent Owner(s)

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FUJITSU LIMITED1-1 KAMIKODANAKA 4-CHOME NAKAHARA-KU KAWASAKI-SHI KANAGAWA 211-8588

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishiguro, Tetsuro Kawasaki, JP 28 140
Nakamura, Norikazu Sagamihara, JP 63 992
Yamada, Atsushi Isehara, JP 406 3161

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