Semiconductor device and power amplifier circuit
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United States of America Patent
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Jun 12, 2018
Issued Date -
Dec 14, 2017
app pub date -
Mar 1, 2017
filing date -
Jun 8, 2016
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Abstract
A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.
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