Method for manufacturing germamde interconnect structures and corresponding interconnect structures
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United States of America Patent
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Jun 12, 2018
Issued Date -
May 14, 2015
app pub date -
May 14, 2013
filing date -
May 14, 2012
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Abstract
Method for forming an interconnect structure, comprising the steps of: forming a recessed structure in a dielectric material on a substrate; at least partially filling said recessed structure with a metal chosen from the group consisting of copper, nickel and cobalt; introducing the substrate in a CVD reactor; bringing the substrate in the CVD reactor to a soak temperature and subsequently performing a soak treatment by supplying a germanium precursor gas to the CVD reactor at the soak temperature, thereby substantially completely converting the metal in the recessed structure to a germanide.
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