Silicon composite substrates
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United States of America Patent
Stats
-
Jun 12, 2018
Issued Date -
N/A
app pub date -
Apr 26, 2017
filing date -
Dec 24, 2010
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A composite substrate includes a single crystal silicon layer on a glass or glass ceramic layer on a support layer can be used to form GaN layer without cracks. The glass or glass ceramic layer can have a set point and/or strain point below the deposition temperature of GaN, which can assist in releasing stress in the deposited GaN layer. Additionally, the composite substrate can be exposed to a heated and dry hydrogen ambient to reduce an oxide layer between the silicon layer and the glass or glass ceramic layer, to allow the formation of free standing GaN layer.
First Claim
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International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 18 Citation Count
- H01L Class
- 87.83 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Dec 12, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Dec 12, 2029 |