System and method for modular simulation of spin transfer torque magnetic random access memory devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 12, 2018
Issued Date -
Jun 16, 2016
app pub date -
Dec 9, 2015
filing date -
Dec 10, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A system and method for simulating behavior of a spin transfer torque magnetic random access memory (STT-MRAM) device includes a hardware processor (HP) and logic instructions (LI) stored in memory. The LI are executed by the HP to configure a library of functional blocks (FBs) to capture physical phenomenon of at least one element of the STT-MRAM configured in the form of a magnetic stack. Selected elements of the stack are mapped into a set of selected FBs (SFBs). The mapping converts the stack to a spin device circuit (SDC) represented by the SFBs. The SFBs are assembled to form the SDC replicating the stack. The SDC includes an electron spin transport, a magnet-dynamics, a magnetic coupling and a coupled electron transport+magnet-dynamics FBs. A set of output parameters simulating the STT-MRAM is generated by the SFBs in response to receiving a set of input parameters.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully