Reflective optical element and optical system for EUV lithography
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United States of America Patent
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Jun 12, 2018
Issued Date -
N/A
app pub date -
Nov 18, 2013
filing date -
May 18, 2011
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Abstract
In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.
First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
CARL ZEISS SMT GMBH | 73447 OBERKOCHEN |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ehm, Dirk Heinrich | Lauchheim, DE | 48 | 350 |
# of filed Patents : 48 Total Citations : 350 | |||
Huber, Peter | Holzschwang, DE | 68 | 645 |
# of filed Patents : 68 Total Citations : 645 | |||
Muellender, Stephan | Aalen, DE | 18 | 136 |
# of filed Patents : 18 Total Citations : 136 | |||
Von, Blanckenhagen Gisela | Aalen, DE | 11 | 82 |
# of filed Patents : 11 Total Citations : 82 |
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- 0 % this patent is cited more than
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